%0 Journal Article
%A Xi, Fengben
%A Han, Yi
%A Liu, Mingshan
%A Bae, Jin Hee
%A Tiedemann, Andreas
%A Grützmacher, Detlev
%A Zhao, Qing-Tai
%T Artificial Synapses Based on Ferroelectric Schottky Barrier Field-Effect Transistors for Neuromorphic Applications
%J ACS applied materials & interfaces
%V 13
%N 27
%@ 1944-8244
%C Washington, DC
%I Soc.
%M FZJ-2021-02619
%P 32005-32012
%D 2021
%X Artificial synapses based on ferroelectric Schottky barrier field-effect transistors (FE-SBFETs) are experimentally demonstrated. The FE-SBFETs employ single-crystalline NiSi2 contacts with an atomically flat interface to Si and Hf0.5Zr0.5O2 ferroelectric layers on silicon-on-insulator substrates. The ferroelectric polarization switching dynamics gradually modulate the NiSi2/Si Schottky barriers and the potential of the channel, thus programming the device conductance with input voltage pulses. The short-term synaptic plasticity is characterized in terms of excitatory/inhibitory post-synaptic current (EPSC) and paired-pulse facilitation/depression. The EPSC amplitude shows a linear response to the amplitude of the pre-synaptic spike. Very low energy/spike consumption as small as ∼2 fJ is achieved, demonstrating high energy efficiency. Long-term potentiation/depression results show very high endurance and very small cycle-to-cycle variations (∼1%) after 105 pulse measurements. Furthermore, spike-timing-dependent plasticity is also emulated using the gate voltage pulse as the pre-synaptic spike and the drain voltage pulse as the post-synaptic spikes. These findings indicate that FE-SBFET synapses have high potential for future neuromorphic computing applications.
%F PUB:(DE-HGF)16
%9 Journal Article
%$ 34171195
%U <Go to ISI:>//WOS:000674333400067
%R 10.1021/acsami.1c07505
%U https://juser.fz-juelich.de/record/893202