TY  - JOUR
AU  - Xi, Fengben
AU  - Han, Yi
AU  - Liu, Mingshan
AU  - Bae, Jin Hee
AU  - Tiedemann, Andreas
AU  - Grützmacher, Detlev
AU  - Zhao, Qing-Tai
TI  - Artificial Synapses Based on Ferroelectric Schottky Barrier Field-Effect Transistors for Neuromorphic Applications
JO  - ACS applied materials & interfaces
VL  - 13
IS  - 27
SN  - 1944-8244
CY  - Washington, DC
PB  - Soc.
M1  - FZJ-2021-02619
SP  - 32005-32012
PY  - 2021
AB  - Artificial synapses based on ferroelectric Schottky barrier field-effect transistors (FE-SBFETs) are experimentally demonstrated. The FE-SBFETs employ single-crystalline NiSi2 contacts with an atomically flat interface to Si and Hf0.5Zr0.5O2 ferroelectric layers on silicon-on-insulator substrates. The ferroelectric polarization switching dynamics gradually modulate the NiSi2/Si Schottky barriers and the potential of the channel, thus programming the device conductance with input voltage pulses. The short-term synaptic plasticity is characterized in terms of excitatory/inhibitory post-synaptic current (EPSC) and paired-pulse facilitation/depression. The EPSC amplitude shows a linear response to the amplitude of the pre-synaptic spike. Very low energy/spike consumption as small as ∼2 fJ is achieved, demonstrating high energy efficiency. Long-term potentiation/depression results show very high endurance and very small cycle-to-cycle variations (∼1%) after 105 pulse measurements. Furthermore, spike-timing-dependent plasticity is also emulated using the gate voltage pulse as the pre-synaptic spike and the drain voltage pulse as the post-synaptic spikes. These findings indicate that FE-SBFET synapses have high potential for future neuromorphic computing applications.
LB  - PUB:(DE-HGF)16
C6  - 34171195
UR  - <Go to ISI:>//WOS:000674333400067
DO  - DOI:10.1021/acsami.1c07505
UR  - https://juser.fz-juelich.de/record/893202
ER  -