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@ARTICLE{Xi:893202,
      author       = {Xi, Fengben and Han, Yi and Liu, Mingshan and Bae, Jin Hee
                      and Tiedemann, Andreas and Grützmacher, Detlev and Zhao,
                      Qing-Tai},
      title        = {{A}rtificial {S}ynapses {B}ased on {F}erroelectric
                      {S}chottky {B}arrier {F}ield-{E}ffect {T}ransistors for
                      {N}euromorphic {A}pplications},
      journal      = {ACS applied materials $\&$ interfaces},
      volume       = {13},
      number       = {27},
      issn         = {1944-8244},
      address      = {Washington, DC},
      publisher    = {Soc.},
      reportid     = {FZJ-2021-02619},
      pages        = {32005-32012},
      year         = {2021},
      abstract     = {Artificial synapses based on ferroelectric Schottky barrier
                      field-effect transistors (FE-SBFETs) are experimentally
                      demonstrated. The FE-SBFETs employ single-crystalline NiSi2
                      contacts with an atomically flat interface to Si and
                      Hf0.5Zr0.5O2 ferroelectric layers on silicon-on-insulator
                      substrates. The ferroelectric polarization switching
                      dynamics gradually modulate the NiSi2/Si Schottky barriers
                      and the potential of the channel, thus programming the
                      device conductance with input voltage pulses. The short-term
                      synaptic plasticity is characterized in terms of
                      excitatory/inhibitory post-synaptic current (EPSC) and
                      paired-pulse facilitation/depression. The EPSC amplitude
                      shows a linear response to the amplitude of the pre-synaptic
                      spike. Very low energy/spike consumption as small as ∼2 fJ
                      is achieved, demonstrating high energy efficiency. Long-term
                      potentiation/depression results show very high endurance and
                      very small cycle-to-cycle variations $(∼1\%)$ after 105
                      pulse measurements. Furthermore, spike-timing-dependent
                      plasticity is also emulated using the gate voltage pulse as
                      the pre-synaptic spike and the drain voltage pulse as the
                      post-synaptic spikes. These findings indicate that FE-SBFET
                      synapses have high potential for future neuromorphic
                      computing applications.},
      cin          = {PGI-9},
      ddc          = {600},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {5234 - Emerging NC Architectures (POF4-523) / DFG project
                      422581876 - Kryogene CMOS Technologie für die Realisierung
                      von von klassischen QuBit-Kontrollschaltkreisen},
      pid          = {G:(DE-HGF)POF4-5234 / G:(GEPRIS)422581876},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {34171195},
      UT           = {WOS:000674333400067},
      doi          = {10.1021/acsami.1c07505},
      url          = {https://juser.fz-juelich.de/record/893202},
}