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@ARTICLE{Rose:893264,
      author       = {Rose, M.-A. and Barnett, J. and Wendland, D. and Hensling,
                      F. V. E. and Boergers, J. M. and Moors, M. and Dittmann, R.
                      and Taubner, T. and Gunkel, F.},
      title        = {{L}ocal inhomogeneities resolved by scanning probe
                      techniques and their impact on local 2{DEG} formation in
                      oxide heterostructures},
      journal      = {Nanoscale advances},
      volume       = {3},
      number       = {14},
      issn         = {2516-0230},
      address      = {Cambridge},
      publisher    = {Royal Society of Chemistry},
      reportid     = {FZJ-2021-02654},
      pages        = {10.1039.D1NA00190F},
      year         = {2021},
      abstract     = {Lateral inhomogeneities in the formation of two-dimensional
                      electron gases (2DEG) directly influence their electronic
                      properties. Understanding their origin is an important
                      factor for fundamental interpretations, as well as high
                      quality devices. Here, we studied the local formation of the
                      buried 2DEG at LaAlO3/SrTiO3 (LAO/STO) interfaces grown on
                      STO (100) single crystals with partial TiO2 termination,
                      utilizing in situ conductive atomic force microscopy (c-AFM)
                      and scattering-type scanning near-field optical microscopy
                      (s-SNOM). Using substrates with different degrees of
                      chemical surface termination, we can link the resulting
                      interface chemistry to an inhomogeneous 2DEG formation. In
                      conductivity maps recorded by c-AFM, a significant lack of
                      conductivity is observed at topographic features, indicative
                      of a local SrO/AlO2 interface stacking order, while
                      significant local conductivity can be probed in regions
                      showing TiO2/LaO interface stacking order. These results
                      could be corroborated by s-SNOM, showing a similar contrast
                      distribution in the optical signal which can be linked to
                      the local electronic properties of the material. The results
                      are further complemented by low-temperature conductivity
                      measurements, which show an increasing residual resistance
                      at 5 K with increasing portion of insulating SrO-terminated
                      areas. Therefore, we can correlate the macroscopic
                      electrical behavior of our samples to their nanoscopic
                      structure. Using proper parameters, 2DEG mapping can be
                      carried out without any visible alteration of sample
                      properties, proving c-AFM and s-SNOM to be viable and
                      destruction-free techniques for the identification of local
                      2DEG formation. Furthermore, applying c-AFM and s-SNOM in
                      this manner opens the exciting prospect to link macroscopic
                      low-temperature transport to its nanoscopic origin.},
      cin          = {PGI-7 / JARA-FIT},
      ddc          = {540},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {523 - Neuromorphic Computing and Network Dynamics
                      (POF4-523)},
      pid          = {G:(DE-HGF)POF4-523},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000661486000001},
      doi          = {10.1039/D1NA00190F},
      url          = {https://juser.fz-juelich.de/record/893264},
}