% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Ariskina:893833,
      author       = {Ariskina, Regina and Schnedler, Michael and Esquinazi,
                      Pablo D. and Champi, Ana and Stiller, Markus and Hergert,
                      Wolfram and Dunin-Borkowski, R. E. and Ebert, Philipp and
                      Venus, Tom and Estrela-Lopis, Irina},
      title        = {{I}nfluence of surface band bending on a narrow band gap
                      semiconductor: {T}unneling atomic force studies of graphite
                      with {B}ernal and rhombohedral stacking orders},
      journal      = {Physical review materials},
      volume       = {5},
      number       = {4},
      issn         = {2475-9953},
      address      = {College Park, MD},
      publisher    = {APS},
      reportid     = {FZJ-2021-02872},
      pages        = {044601},
      year         = {2021},
      abstract     = {Tunneling atomic force microscopy (TUNA) was used at
                      ambient conditions to measure the current-voltage (I−V)
                      characteristics at clean surfaces of highly oriented
                      graphite samples with Bernal and rhombohedral stacking
                      orders. The characteristic curves measured on Bernal-stacked
                      graphite surfaces can be understood with an ordinary
                      self-consistent semiconductor modeling and quantum
                      mechanical tunneling current derivations. We show that the
                      absence of a voltage region without measurable current in
                      the I−V spectra is not a proof of the lack of an energy
                      band gap. It can be induced by a surface band bending due to
                      a finite contact potential between tip and sample surface.
                      Taking this into account in the model, we succeed to obtain
                      a quantitative agreement between simulated and measured
                      tunnel spectra for band gaps (12...37) meV, in agreement
                      with those extracted from the exponential temperature
                      decrease of the longitudinal resistance measured in graphite
                      samples with Bernal stacking order. In contrast, the surface
                      of relatively thick graphite samples with rhombohedral
                      stacking reveals the existence of a maximum in the first
                      derivative dI/dV, a behavior compatible with the existence
                      of a flat band. The characteristics of this maximum are
                      comparable to those obtained at low temperatures with
                      similar techniques.},
      cin          = {PGI-5 / ER-C-1},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-5-20110106 / I:(DE-Juel1)ER-C-1-20170209},
      pnm          = {5353 - Understanding the Structural and Functional Behavior
                      of Solid State Systems (POF4-535)},
      pid          = {G:(DE-HGF)POF4-5353},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000655931600003},
      doi          = {10.1103/PhysRevMaterials.5.044601},
      url          = {https://juser.fz-juelich.de/record/893833},
}