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@ARTICLE{Carlier:893850,
      author       = {Carlier, Thomas and Chambrier, Marie-Hélène and Da Costa,
                      Antonio and Blanchard, Florent and Denneulin, Thibaud and
                      Létiche, Manon and Roussel, Pascal and Desfeux, Rachel and
                      Ferri, Anthony},
      title        = {{F}erroelectric {S}tate in an α-{N}d 2 {WO} 6 {P}olymorph
                      {S}tabilized in a {T}hin {F}ilm},
      journal      = {Chemistry of materials},
      volume       = {32},
      number       = {17},
      issn         = {1520-5002},
      address      = {Washington, DC},
      publisher    = {American Chemical Society},
      reportid     = {FZJ-2021-02874},
      pages        = {7188 - 7200},
      year         = {2020},
      abstract     = {Taking advantage of strain engineering, Nd2WO6 (NdWO) thin
                      films have been successfully grown on (001)-oriented SrTiO3
                      single-crystal substrates by pulsed-laser deposition.
                      High-resolution X-ray diffraction characterizations
                      highlight the stabilization of a new orthorhombic (Pm21n)
                      NdWO polymorphic form, isostructural to α-La2WO6.
                      Reciprocal space mappings have been used in the
                      determination of the NdWO thin-film structure. Coupled with
                      the 2θ-ω X-ray patterns, the cell parameters were
                      calculated: a = 16.34(5) Å, b = 5.46(5) Å, and c = 8.68(1)
                      Å. X-ray-diffraction pole-figure measurements show the
                      crystallographic relationships between the film and
                      substrate: [100]NdWO∥[110]STO, [010]NdWO∥[11̅0]STO, and
                      [001]NdWO∥[001]STO. Both X-ray diffraction and
                      transmission electron microscopy studies reveal the
                      existence of (510)-oriented crystallites with respect to the
                      plane of the substrate mainly at the interface
                      film/substrate and dispersed in the (001)-NdWO matrix. In
                      addition, robust piezoelectricity and ferroelectricity are
                      revealed at room temperature through both local hysteresis
                      loops and domain manipulation experiments using the
                      piezoresponse force microscopy technique. Typical
                      polarization retention behaviors associated with specific
                      nanoscale conduction are in good agreement with the
                      classical ferroelectric phenomenon in oxide materials. The
                      successful observation of piezo-/ferroelectricity at room
                      temperature in innovative strain-stabilized α-NdWO thin
                      films paves the way for new lead-free functional materials
                      devoted to numerous applications, including actuators,
                      sensors, or nonvolatile memory devices.},
      cin          = {ER-C-1},
      ddc          = {540},
      cid          = {I:(DE-Juel1)ER-C-1-20170209},
      pnm          = {5351 - Platform for Correlative, In Situ and Operando
                      Characterization (POF4-535)},
      pid          = {G:(DE-HGF)POF4-5351},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000569075300009},
      doi          = {10.1021/acs.chemmater.0c01405},
      url          = {https://juser.fz-juelich.de/record/893850},
}