% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Koch:893894,
      author       = {Koch, Julian and Müller-Caspary, Knut and Pfnür, Herbert},
      title        = {{M}atching different symmetries with an atomically sharp
                      interface: {E}pitaxial {B}a 2 {S}i{O} 4 on {S}i(001)},
      journal      = {Physical review materials},
      volume       = {4},
      number       = {1},
      issn         = {2475-9953},
      address      = {College Park, MD},
      publisher    = {APS},
      reportid     = {FZJ-2021-02906},
      pages        = {013401},
      year         = {2020},
      abstract     = {In this paper, we present a comprehensive investigation of
                      the epitaxial growth of Ba2SiO4 on Si(001), a system in
                      which neither crystal symmetry nor lattice constants match
                      in a simple manner. In addition, it has the potential to
                      become the first crystalline high-k gate dielectric. We
                      combined x-ray photoelectron spectroscopy, low-energy
                      electron diffraction, and aberration-corrected scanning
                      transmission electron microscopy (STEM) in order to optimize
                      the epitaxial growth by molecular beam epitaxy. Our focus
                      was on the formation of a high quality crystalline
                      interface. The films were grown by a co-deposition method
                      that requires no diffusion of Si from the substrate. An
                      annealing temperature of 400∘C turned out to be sufficient
                      to form chemically homogeneous films. However, crystalline
                      films require an annealing step to 670–690∘C for the
                      formation of the epitaxial interface necessary for breaking
                      Si-O bonds. STEM confirms that the interface is atomically
                      sharp and that a single layer of the silicate is changed to
                      a (2×3) structure at the interface from the (2×1.5) bulk
                      structure. Based on our experimental results, we propose a
                      geometrical model for the epitaxial interface. The growth of
                      films with an understoichiometric Si flux leads to the
                      formation of a near-surface Ba silicide that does not
                      restrict the epitaxial silicate growth.},
      cin          = {ER-C-1},
      ddc          = {530},
      cid          = {I:(DE-Juel1)ER-C-1-20170209},
      pnm          = {5351 - Platform for Correlative, In Situ and Operando
                      Characterization (POF4-535) / moreSTEM - Momentum-resolved
                      Scanning Transmission Electron Microscopy (VH-NG-1317)},
      pid          = {G:(DE-HGF)POF4-5351 / G:(DE-HGF)VH-NG-1317},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000506605500001},
      doi          = {10.1103/PhysRevMaterials.4.013401},
      url          = {https://juser.fz-juelich.de/record/893894},
}