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| 001 | 893894 | ||
| 005 | 20220131120348.0 | ||
| 024 | 7 | _ | |a 10.1103/PhysRevMaterials.4.013401 |2 doi |
| 024 | 7 | _ | |a 2475-9953 |2 ISSN |
| 024 | 7 | _ | |a 2476-0455 |2 ISSN |
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| 024 | 7 | _ | |a WOS:000506605500001 |2 WOS |
| 037 | _ | _ | |a FZJ-2021-02906 |
| 041 | _ | _ | |a English |
| 082 | _ | _ | |a 530 |
| 100 | 1 | _ | |a Koch, Julian |0 0000-0002-7586-8264 |b 0 |e Corresponding author |
| 245 | _ | _ | |a Matching different symmetries with an atomically sharp interface: Epitaxial Ba 2 SiO 4 on Si(001) |
| 260 | _ | _ | |a College Park, MD |c 2020 |b APS |
| 336 | 7 | _ | |a article |2 DRIVER |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 1625927265_13186 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
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| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 520 | _ | _ | |a In this paper, we present a comprehensive investigation of the epitaxial growth of Ba2SiO4 on Si(001), a system in which neither crystal symmetry nor lattice constants match in a simple manner. In addition, it has the potential to become the first crystalline high-k gate dielectric. We combined x-ray photoelectron spectroscopy, low-energy electron diffraction, and aberration-corrected scanning transmission electron microscopy (STEM) in order to optimize the epitaxial growth by molecular beam epitaxy. Our focus was on the formation of a high quality crystalline interface. The films were grown by a co-deposition method that requires no diffusion of Si from the substrate. An annealing temperature of 400∘C turned out to be sufficient to form chemically homogeneous films. However, crystalline films require an annealing step to 670–690∘C for the formation of the epitaxial interface necessary for breaking Si-O bonds. STEM confirms that the interface is atomically sharp and that a single layer of the silicate is changed to a (2×3) structure at the interface from the (2×1.5) bulk structure. Based on our experimental results, we propose a geometrical model for the epitaxial interface. The growth of films with an understoichiometric Si flux leads to the formation of a near-surface Ba silicide that does not restrict the epitaxial silicate growth. |
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| 536 | _ | _ | |a moreSTEM - Momentum-resolved Scanning Transmission Electron Microscopy (VH-NG-1317) |0 G:(DE-HGF)VH-NG-1317 |c VH-NG-1317 |x 1 |
| 588 | _ | _ | |a Dataset connected to CrossRef, Journals: juser.fz-juelich.de |
| 700 | 1 | _ | |a Müller-Caspary, Knut |0 P:(DE-Juel1)165314 |b 1 |u fzj |
| 700 | 1 | _ | |a Pfnür, Herbert |0 0000-0003-1568-4209 |b 2 |
| 773 | _ | _ | |a 10.1103/PhysRevMaterials.4.013401 |g Vol. 4, no. 1, p. 013401 |0 PERI:(DE-600)2898355-5 |n 1 |p 013401 |t Physical review materials |v 4 |y 2020 |x 2475-9953 |
| 856 | 4 | _ | |y OpenAccess |u https://juser.fz-juelich.de/record/893894/files/Ba-Silikat_1.pdf |
| 856 | 4 | _ | |y OpenAccess |u https://juser.fz-juelich.de/record/893894/files/PhysRevMaterials.4.013401.pdf |
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| 914 | 1 | _ | |y 2021 |
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