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@ARTICLE{Funck:894111,
      author       = {Funck, Carsten and Menzel, Stephan},
      title        = {{A} comprehensive model of electron conduction in
                      oxide-based memristive devices},
      journal      = {ACS applied electronic materials},
      volume       = {3},
      number       = {9},
      issn         = {2637-6113},
      address      = {Washington, DC},
      publisher    = {ACS Publications},
      reportid     = {FZJ-2021-03044},
      pages        = {3674 - 3692},
      year         = {2021},
      abstract     = {Memristive devices are two-terminal devices that can change
                      their resistance state upon application of appropriate
                      voltage stimuli. The resistance can be tuned over a wide
                      resistance range enabling applications such as multibit data
                      storage or analog computing-in-memory concepts. One of the
                      most promising classes of memristive devices is based on the
                      valence change mechanism in oxide-based devices. In these
                      devices, a configurational change of oxygen defects, i.e.
                      oxygen vacancies, leads to the change of the device
                      resistance. A microscopic understanding of the conduction is
                      necessary in order to design memristive devices with
                      specific resistance properties. In this paper, we discuss
                      the conduction mechanism proposed in the literature and
                      propose a comprehensive, microscopic model of the conduction
                      mechanism in this class of devices. To develop this
                      microscopic picture of the conduction, ab initio simulation
                      models are developed. These simulations suggest two
                      different types of conduction, which are both limited by a
                      tunneling through the Schottky barrier at the metal
                      electrode contact. The difference between the two conduction
                      mechanisms is the following: for the first type, the
                      electrons tunnel into the conduction band and, in the second
                      type, into the vacancy defect states. These two types of
                      conduction differ in their current voltage relation, which
                      has been detected experimentally. The origin of the
                      resistive switching is identical for the two types of
                      conduction and is based on a modification of the tunneling
                      distance due to the oxygen vacancy induced screening of the
                      Schottky barrier. This understanding may help to design
                      optimized devices in terms of the dynamic resistance range
                      for specific applications.},
      cin          = {PGI-7},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-7-20110106},
      pnm          = {5233 - Memristive Materials and Devices (POF4-523) /
                      Verbundprojekt: Neuro-inspirierte Technologien der
                      künstlichen Intelligenz für die Elektronik der Zukunft -
                      NEUROTEC -, Teilvorhaben: Forschungszentrum Jülich
                      (16ES1133K) / BMBF-16ES1134 - Verbundprojekt:
                      Neuro-inspirierte Technologien der künstlichen Intelligenz
                      für die Elektronik der Zukunft - NEUROTEC -
                      (BMBF-16ES1134)},
      pid          = {G:(DE-HGF)POF4-5233 / G:(BMBF)16ES1133K /
                      G:(DE-82)BMBF-16ES1134},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000703541500001},
      doi          = {10.1021/acsaelm.1c00398},
      url          = {https://juser.fz-juelich.de/record/894111},
}