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@ARTICLE{Gutsche:894113,
      author       = {Gutsche, Alexander and Siegel, Sebastian and Zhang, Jinchao
                      and Hambsch, Sebastian and Dittmann, Regina},
      title        = {{E}xploring {A}rea-{D}ependent
                      {P}r0.7{C}a0.3{M}n{O}3-{B}ased {M}emristive {D}evices as
                      {S}ynapses in {S}piking and {A}rtificial {N}eural
                      {N}etworks},
      journal      = {Frontiers in neuroscience},
      volume       = {15},
      issn         = {1662-453X},
      address      = {Lausanne},
      publisher    = {Frontiers Research Foundation},
      reportid     = {FZJ-2021-03046},
      pages        = {661261},
      year         = {2021},
      abstract     = {Memristive devices are novel electronic devices, which
                      resistance can be tuned by an external voltage in a
                      non-volatile way. Due to their analog resistive switching
                      behavior, they are considered to emulate the behavior of
                      synapses in neuronal networks. In this work, we investigate
                      memristive devices based on the field-driven redox process
                      between the p-conducting Pr0.7Ca0.3MnO3 (PCMO) and different
                      tunnel barriers, namely, Al2O3, Ta2O5, and WO3. In contrast
                      to the more common filamentary-type switching devices, the
                      resistance range of these area-dependent switching devices
                      can be adapted to the requirements of the surrounding
                      circuit. We investigate the impact of the tunnel barrier
                      layer on the switching performance including area scaling of
                      the current and variability. Best performance with respect
                      to the resistance window and the variability is observed for
                      PCMO with a native Al2O3 tunnel oxide. For all different
                      layer stacks, we demonstrate a spike timing dependent
                      plasticity like behavior of the investigated PCMO cells.
                      Furthermore, we can also tune the resistance in an analog
                      fashion by repeated switching the device with voltage pulses
                      of the same amplitude and polarity. Both measurements
                      resemble the plasticity of biological synapses. We
                      investigate in detail the impact of different pulse heights
                      and pulse lengths on the shape of the stepwise SET and RESET
                      curves. We use these measurements as input for the
                      simulation of training and inference in a multilayer
                      perceptron for pattern recognition, to show the use of
                      PCMO-based ReRAM devices as weights in artificial neural
                      networks which are trained by gradient descent methods.
                      Based on this, we identify certain trends for the impact of
                      the applied voltages and pulse length on the resulting shape
                      of the measured curves and on the learning rate and accuracy
                      of the multilayer perceptron.},
      cin          = {PGI-7 / PGI-10 / JARA-FIT},
      ddc          = {610},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / I:(DE-Juel1)PGI-10-20170113 /
                      $I:(DE-82)080009_20140620$},
      pnm          = {5233 - Memristive Materials and Devices (POF4-523) /
                      BMBF-16ME0398K - Verbundprojekt: Neuro-inspirierte
                      Technologien der künstlichen Intelligenz für die
                      Elektronik der Zukunft - NEUROTEC II - (BMBF-16ME0398K) /
                      ACA - Advanced Computing Architectures (SO-092) / DFG
                      project 167917811 - SFB 917: Resistiv schaltende
                      Chalkogenide für zukünftige Elektronikanwendungen:
                      Struktur, Kinetik und Bauelementskalierung "Nanoswitches"
                      (167917811)},
      pid          = {G:(DE-HGF)POF4-5233 / G:(DE-82)BMBF-16ME0398K /
                      G:(DE-HGF)SO-092 / G:(GEPRIS)167917811},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {34276286},
      UT           = {WOS:000674438100001},
      doi          = {10.3389/fnins.2021.661261},
      url          = {https://juser.fz-juelich.de/record/894113},
}