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@ARTICLE{nl:894258,
author = {Ünlü, Feray and Kulkarni, Ashish and Lê, Khan and Bohr,
Christoph and Bliesener, Andrea and Öz, Seren Dilara and
Jena, Ajay Kumar and Ando, Yoichi and Miyasaka, Tsutomu and
Kirchartz, Thomas and Mathur, Sanjay},
title = {{S}ingle- or double {A}-site cations in {A}3{B}i2{I}9
bismuth perovskites: {W}hat is the suitable choice?},
journal = {Journal of materials research},
volume = {36},
number = {9},
issn = {2044-5326},
address = {Cambridge [u.a.]},
publisher = {Cambridge Univ. Press},
reportid = {FZJ-2021-03133},
pages = {1794 - 1804},
year = {2021},
abstract = {Investigations on the effect of single or double A-site
cation engineering on the photovoltaic performance of
bismuth perovskite-inspired materials (A3Bi2I9) are rare.
Herein, we report novel single- and double-cation based
bismuth perovskite-inspired materials developed by (1)
completely replacing CH3NH3+ (methylammonium, MA+) in
MA3Bi2I9 with various organic cations such as CH(NH2)2+
(formamidinium, FA+), (CH3)2NH2+ (dimethylammonium, DMA+),
C(NH2)3+ (guanidinium, GA+) and inorganic cations such as
cesium (Cs+), rubidium (Rb+), potassium (K+), sodium (Na+)
and lithium (Li+) and (2) partially replacing MA+ with Cs+
in different stoichiometric ratios. Compared to
single-cation based bismuth perovskite devices, the
double-cation bismuth perovskite device showed an increment
in the device power conversion efficiency (PCE) up to
$1.5\%$ crediting to the reduction in the bandgap. This is
the first study demonstrating double-cation based bismuth
perovskite showing bandgap reduction and increment in device
efficiency and opens up the possibilities towards
compositional engineering for improved device performance.},
cin = {IEK-5},
ddc = {670},
cid = {I:(DE-Juel1)IEK-5-20101013},
pnm = {1212 - Materials and Interfaces (POF4-121)},
pid = {G:(DE-HGF)POF4-1212},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000635073400001},
doi = {10.1557/s43578-021-00155-z},
url = {https://juser.fz-juelich.de/record/894258},
}