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@ARTICLE{Wrana:894825,
      author       = {Wrana, Dominik and Gensch, Thomas and Jany, Benedykt R. and
                      Cieślik, Karol and Rodenbücher, Christian and Cempura,
                      Grzegorz and Kruk, Adam and Krok, Franciszek},
      title        = {{P}hotoluminescence imaging of defects in {T}i{O}2: {T}he
                      influence of grain boundaries and doping on charge carrier
                      dynamics},
      journal      = {Applied surface science},
      volume       = {569},
      issn         = {0169-4332},
      address      = {Amsterdam},
      publisher    = {Elsevier},
      reportid     = {FZJ-2021-03409},
      pages        = {150909 -},
      year         = {2021},
      abstract     = {Understanding the mechanisms of charge generation and their
                      recombination in rutile TiO2 is of key importance in the
                      design of optoelectronic and photocatalytic devices. In this
                      study, we investigate the impact of both extrinsic and
                      intrinsic defects on photoluminescence (PL) decay dynamics.
                      The exploitation of two-photon fluorescence lifetime imaging
                      microscopy (FLIM) enabled differentiation to be made between
                      photoluminescence originating from dislocations and bulk in
                      Nb-doped rutile TiO2. It was found that dislocations pinned
                      at grain boundaries feature lower photoluminescence
                      intensity and faster decay times (by 100 ps) than those in
                      the bulk. This can be reversed upon reduction, whereby trap
                      states are preferentially formed near to dislocation sites.
                      We also evaluated the dependence of the extrinsic doping
                      level on the charge carrier dynamics of rutile, and show
                      that PL lifetimes are governed by predominant Auger
                      processes that are insensitive to reduction, unlike
                      dislocations. We believe that the oxygen deficiency
                      suppression of charge carrier recombination at grain
                      boundaries is the key factor in improving the photocatalytic
                      activity of real TiO2-based materials.},
      cin          = {IBI-1 / IET-4},
      ddc          = {660},
      cid          = {I:(DE-Juel1)IBI-1-20200312 / I:(DE-Juel1)IET-4-20191129},
      pnm          = {5243 - Information Processing in Distributed Systems
                      (POF4-524) / 1231 - Electrochemistry for Hydrogen
                      (POF4-123)},
      pid          = {G:(DE-HGF)POF4-5243 / G:(DE-HGF)POF4-1231},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000759710000001},
      doi          = {10.1016/j.apsusc.2021.150909},
      url          = {https://juser.fz-juelich.de/record/894825},
}