Hauptseite > Publikationsdatenbank > An Ag/HfO2/Pt Threshold Switching Device with an Ultra-Low Leakage (< 10 fA), High On/OffRatio (> 1011), and Low Threshold Voltage (< 0.2 V) for Energy-Efficient Neuromorphic Computing > EndNote Text 
%0 Conference Paper
%A Chekol, Solomon Amsalu
%A Cuppers, Felix
%A Waser, R.
%A Hoffmann-Eifert, Susanne
%T An Ag/HfO2/Pt Threshold Switching Device with an Ultra-Low Leakage (&lt; 10 fA), High On/OffRatio (&gt; 1011), and Low Threshold Voltage (&lt; 0.2 V) for Energy-Efficient Neuromorphic Computing
%I IEEE
%M FZJ-2021-03498
%P 115
%D 2021
%< 2021 IEEE International Memory Workshop (IMW) : [Proceedings] - IEEE, 2021. - ISBN 978-1-7281-8517-0 - doi:10.1109/IMW51353.2021.9439601
%B 2021 IEEE International Memory Workshop (IMW)
%C 16 May 2021 - 19 May 2021, Dresden (Germany)
Y2 16 May 2021 - 19 May 2021
M2 Dresden, Germany
%F PUB:(DE-HGF)8 ; PUB:(DE-HGF)7
%9 Contribution to a conference proceedingsContribution to a book
%U <Go to ISI:>//WOS:000681328500030
%R 10.1109/IMW51353.2021.9439601
%U https://juser.fz-juelich.de/record/894957
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