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@ARTICLE{vonWitzleben:894959,
      author       = {von Witzleben, M. and Walfort, S. and Waser, R. and Menzel,
                      Stephan and Bottger, U.},
      title        = {{D}etermining the {E}lectrical {C}harging {S}peed {L}imit
                      of {R}e{RAM} {D}evices},
      journal      = {IEEE journal of the Electron Devices Society},
      volume       = {9},
      issn         = {2168-6734},
      address      = {[New York, NY]},
      publisher    = {IEEE},
      reportid     = {FZJ-2021-03500},
      pages        = {667 - 678},
      year         = {2021},
      abstract     = {Redox-based random-access memory (ReRAM) has the potential
                      to successfully address the technological barriers that
                      today’s memory technologies face. One of its promising
                      features is its fast switching speed down to 50 ps.
                      Identifying the limiting process of the switching speed is,
                      however, difficult. At sub-nanosecond timescales three
                      candidates are being discussed: An intrinsic limitation,
                      being the migration of mobile donor ions, e.g., oxygen
                      vacancies, the heating time, and its electrical charging
                      time. Usually, coplanar waveguides (CPW) are used to bring
                      the electrical stimuli to the device. Based on the data of
                      previous publications, we show, that the rise time of the
                      effective electrical stimulus is mainly responsible for
                      limiting the switching speed at the sub-nanosecond
                      timescale. For this purpose, frequency domain measurements
                      up to 40 GHz were conducted on three $Pt\TaO$ x $\Ta$
                      devices with different sizes. By multiplying the obtained
                      scattering parameters of these devices with the Fourier
                      transform of the incoming signal, and building the inverse
                      Fourier transform of this product, the voltage at the ReRAM
                      device can be determined. Finally, the rise time of the
                      voltage at the ReRAM device is calculated, which is a
                      measure to the electrical charging time. It was shown that
                      this rise time amounts to 2.5 ns for the largest device,
                      which is significantly slower than the pulse generator’s
                      rise time. Reducing the device’s rise time down to 66 ps
                      is possible, but requires smaller features sizes and other
                      optimizations, which we summarize in this paper.},
      cin          = {PGI-7 / JARA-FIT},
      ddc          = {621.3},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {5233 - Memristive Materials and Devices (POF4-523) /
                      Verbundprojekt: Neuro-inspirierte Technologien der
                      künstlichen Intelligenz für die Elektronik der Zukunft -
                      NEUROTEC -, Teilvorhaben: Forschungszentrum Jülich
                      (16ES1133K) / BMBF-16ES1134 - Verbundprojekt:
                      Neuro-inspirierte Technologien der künstlichen Intelligenz
                      für die Elektronik der Zukunft - NEUROTEC -
                      (BMBF-16ES1134)},
      pid          = {G:(DE-HGF)POF4-5233 / G:(BMBF)16ES1133K /
                      G:(DE-82)BMBF-16ES1134},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000673622400001},
      doi          = {10.1109/JEDS.2021.3095389},
      url          = {https://juser.fz-juelich.de/record/894959},
}