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@ARTICLE{Alessio:894997,
      author       = {Alessio, Andrea and Bonino, Valentina and Heisig, Thomas
                      and Picollo, Federico and Torsello, Daniele and Mino,
                      Lorenzo and Martinez-Criado, Gema and Dittmann, Regina and
                      Truccato, Marco},
      title        = {{F}unctional {M}odifications {I}nduced via {X}‐ray
                      {N}anopatterning in {T}i{O} 2 {R}utile {S}ingle {C}rystals},
      journal      = {Physica status solidi / Rapid research letters},
      volume       = {15},
      number       = {10},
      issn         = {1862-6270},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2021-03518},
      pages        = {2100409},
      year         = {2021},
      abstract     = {The possibility to directly write electrically conducting
                      channels in a desired position in rutile TiO2 devices
                      equipped with asymmetric electrodes—like in memristive
                      devices—by means of the X-ray nanopatterning (XNP)
                      technique (i.e., intense, localized irradiation exploiting
                      an X-ray nanobeam) is investigated. Device characterization
                      is carried out by means of a multitechnique approach
                      involving X-ray fluorescence (XRF), X-ray excited optical
                      luminescence (XEOL), electrical transport, and atomic force
                      microscopy (AFM) techniques. It is shown that the device
                      conductivity increases and the rectifying effect of the
                      Pt/TiO2 Schottky barrier decreases after irradiation with
                      doses of the order of 1011 Gy and fluences of the order of
                      1012 J m−2. Irradiated regions also show the ability
                      to pin and guide the electroforming process between the
                      electrodes. Indications are that XNP should be able to
                      promote the local formation of oxygen vacancies. This effect
                      could lead to a more deterministic implementation of
                      electroforming, being of interest for production of
                      memristive devices.},
      cin          = {PGI-7 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {5233 - Memristive Materials and Devices (POF4-523) / DFG
                      project 167917811 - SFB 917: Resistiv schaltende
                      Chalkogenide für zukünftige Elektronikanwendungen:
                      Struktur, Kinetik und Bauelementskalierung "Nanoswitches"
                      (167917811)},
      pid          = {G:(DE-HGF)POF4-5233 / G:(GEPRIS)167917811},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000695798200001},
      doi          = {10.1002/pssr.202100409},
      url          = {https://juser.fz-juelich.de/record/894997},
}