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@ARTICLE{Cao:896755,
      author       = {Cao, Lei and Herklotz, Andreas and Rata, Diana and Yin,
                      Chenyang and Petracic, Oleg and Kentsch, Ulrich and Helm,
                      Manfred and Zhou, Shengqiang},
      title        = {{M}etal–{I}nsulator {T}ransition via {I}on {I}rradiation
                      in {E}pitaxial {L}a 0.7 {S}r 0.3 {M}n{O} 3− δ {T}hin
                      {F}ilms},
      journal      = {Physica status solidi / Rapid research letters},
      volume       = {15},
      number       = {11},
      issn         = {1862-6270},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2021-03579},
      pages        = {2100278 -},
      year         = {2021},
      abstract     = {Complex oxides provide rich physics related to ionic
                      defects. For the proper tuning of functionalities in oxide
                      heterostructures, it is highly desired to develop fast,
                      effective, and low-temperature routes for the dynamic
                      modification of defect concentration and distribution.
                      Herein, the use of helium implantation to efficiently
                      control the vacancy profiles in epitaxial
                      La0.7Sr0.3MnO3−δ thin films is reported. The viability of
                      this approach is supported by lattice expansion in the
                      out-of-plane lattice direction and dramatic change in
                      physical properties, i.e., a transition from ferromagnetic
                      metallic to antiferromagnetic insulating. In particular, a
                      significant increase of resistivity up to four orders of
                      magnitude is evidenced at room temperature, upon
                      implantation of highly energetic He ions. The result offers
                      an attractive means for tuning the emergent physical
                      properties of oxide thin films via strong coupling between
                      strain, defects, and valence.},
      cin          = {JCNS-2 / PGI-4 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)JCNS-2-20110106 / I:(DE-Juel1)PGI-4-20110106 /
                      $I:(DE-82)080009_20140620$},
      pnm          = {632 - Materials – Quantum, Complex and Functional
                      Materials (POF4-632) / 6G4 - Jülich Centre for Neutron
                      Research (JCNS) (FZJ) (POF4-6G4)},
      pid          = {G:(DE-HGF)POF4-632 / G:(DE-HGF)POF4-6G4},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000696764700001},
      doi          = {10.1002/pssr.202100278},
      url          = {https://juser.fz-juelich.de/record/896755},
}