% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Hennen:897221,
      author       = {Hennen, T. and Wichmann, E. and Elias, A. and Lille, J. and
                      Mosendz, O. and Waser, R. and Wouters, D. J. and Bedau, D.},
      title        = {{C}urrent-limiting amplifier for high speed measurement of
                      resistive switching data},
      journal      = {Review of scientific instruments},
      volume       = {92},
      number       = {5},
      issn         = {1089-7623},
      address      = {[S.l.]},
      publisher    = {American Institute of Physics},
      reportid     = {FZJ-2021-03683},
      pages        = {054701 -},
      year         = {2021},
      abstract     = {Resistive switching devices, important for emerging memory
                      and neuromorphic applications, face significant challenges
                      related to the control of delicate filamentary states in the
                      oxide material. As a device switches, its rapid conductivity
                      change is involved in a positive feedback process that would
                      lead to runaway destruction of the cell without current,
                      voltage, or energy limitation. Typically, cells are directly
                      patterned on MOS transistors to limit the current, but this
                      approach is very restrictive as the necessary integration
                      limits the materials available as well as the fabrication
                      cycle time. In this article, we propose an external circuit
                      to cycle resistive memory cells, capturing the full transfer
                      curves while driving the cells in a way that suppresses
                      runaway transitions. Using this circuit, we demonstrate the
                      acquisition of 105 I, V loops per second without using
                      on-wafer current limiting transistors. This setup brings
                      voltage sweeping measurements to a relevant timescale for
                      applications and enables many new experimental possibilities
                      for device evaluation in a statistical context.},
      cin          = {PGI-7 / PGI-10 / JARA-FIT},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / I:(DE-Juel1)PGI-10-20170113 /
                      $I:(DE-82)080009_20140620$},
      pnm          = {5233 - Memristive Materials and Devices (POF4-523)},
      pid          = {G:(DE-HGF)POF4-5233},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {34243265},
      UT           = {WOS:000646353400009},
      doi          = {10.1063/5.0047571},
      url          = {https://juser.fz-juelich.de/record/897221},
}