%0 Journal Article
%A Liu, Jingjing
%A Qu, Junle
%A Kirchartz, Thomas
%A Song, Jun
%T Optoelectronic devices based on the integration of halide perovskites with silicon-based materials
%J Journal of materials chemistry / A
%V 9
%N 37
%@ 2050-7496
%C London ˜[u.a.]œ
%I RSC
%M FZJ-2021-03713
%P 20919 - 20940
%D 2021
%X Halide perovskites are widely used as an absorbing or emitting layer in emerging high-performance optoelectronic devices due to their high absorption coefficients, long charge carrier diffusion lengths, low defect density and intense photoluminescence. Si-based materials (c-Si, a-Si, SixNy, SiCx and SiO2) play important roles in high performance perovskite optoelectronic devices due to the dominance of Si-based microelectronics and the important role of Si-based solar cells in photovoltaics. Controlling the preparation of perovskite materials on the dominant Si optoelectronics platform is a crucial step to realize practical perovskite-based optoelectronic devices. This review highlights the recent progress in Si-based perovskite optoelectronic devices including perovskite/Si tandem solar cells, perovskite/Si photodetectors, perovskite/Si light emitting diodes and optically pumped lasers. The remaining challenge in Si-based perovskite optoelectronic devices research are discussed.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000693210800001
%R 10.1039/D1TA04527J
%U https://juser.fz-juelich.de/record/897251