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000897251 1001_ $$0P:(DE-Juel1)180513$$aLiu, Jingjing$$b0
000897251 245__ $$aOptoelectronic devices based on the integration of halide perovskites with silicon-based materials
000897251 260__ $$aLondon ˜[u.a.]œ$$bRSC$$c2021
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000897251 520__ $$aHalide perovskites are widely used as an absorbing or emitting layer in emerging high-performance optoelectronic devices due to their high absorption coefficients, long charge carrier diffusion lengths, low defect density and intense photoluminescence. Si-based materials (c-Si, a-Si, SixNy, SiCx and SiO2) play important roles in high performance perovskite optoelectronic devices due to the dominance of Si-based microelectronics and the important role of Si-based solar cells in photovoltaics. Controlling the preparation of perovskite materials on the dominant Si optoelectronics platform is a crucial step to realize practical perovskite-based optoelectronic devices. This review highlights the recent progress in Si-based perovskite optoelectronic devices including perovskite/Si tandem solar cells, perovskite/Si photodetectors, perovskite/Si light emitting diodes and optically pumped lasers. The remaining challenge in Si-based perovskite optoelectronic devices research are discussed.
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000897251 7001_ $$0P:(DE-HGF)0$$aQu, Junle$$b1
000897251 7001_ $$0P:(DE-Juel1)159457$$aKirchartz, Thomas$$b2$$eCorresponding author
000897251 7001_ $$0P:(DE-HGF)0$$aSong, Jun$$b3$$eCorresponding author
000897251 773__ $$0PERI:(DE-600)2702232-8$$a10.1039/D1TA04527J$$gVol. 9, no. 37, p. 20919 - 20940$$n37$$p20919 - 20940$$tJournal of materials chemistry / A$$v9$$x2050-7496$$y2021
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