TY  - JOUR
AU  - Liu, Jingjing
AU  - Qu, Junle
AU  - Kirchartz, Thomas
AU  - Song, Jun
TI  - Optoelectronic devices based on the integration of halide perovskites with silicon-based materials
JO  - Journal of materials chemistry / A
VL  - 9
IS  - 37
SN  - 2050-7496
CY  - London ˜[u.a.]œ
PB  - RSC
M1  - FZJ-2021-03713
SP  - 20919 - 20940
PY  - 2021
AB  - Halide perovskites are widely used as an absorbing or emitting layer in emerging high-performance optoelectronic devices due to their high absorption coefficients, long charge carrier diffusion lengths, low defect density and intense photoluminescence. Si-based materials (c-Si, a-Si, SixNy, SiCx and SiO2) play important roles in high performance perovskite optoelectronic devices due to the dominance of Si-based microelectronics and the important role of Si-based solar cells in photovoltaics. Controlling the preparation of perovskite materials on the dominant Si optoelectronics platform is a crucial step to realize practical perovskite-based optoelectronic devices. This review highlights the recent progress in Si-based perovskite optoelectronic devices including perovskite/Si tandem solar cells, perovskite/Si photodetectors, perovskite/Si light emitting diodes and optically pumped lasers. The remaining challenge in Si-based perovskite optoelectronic devices research are discussed.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000693210800001
DO  - DOI:10.1039/D1TA04527J
UR  - https://juser.fz-juelich.de/record/897251
ER  -