% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Liu:897251,
      author       = {Liu, Jingjing and Qu, Junle and Kirchartz, Thomas and Song,
                      Jun},
      title        = {{O}ptoelectronic devices based on the integration of halide
                      perovskites with silicon-based materials},
      journal      = {Journal of materials chemistry / A},
      volume       = {9},
      number       = {37},
      issn         = {2050-7496},
      address      = {London ˜[u.a.]œ},
      publisher    = {RSC},
      reportid     = {FZJ-2021-03713},
      pages        = {20919 - 20940},
      year         = {2021},
      abstract     = {Halide perovskites are widely used as an absorbing or
                      emitting layer in emerging high-performance optoelectronic
                      devices due to their high absorption coefficients, long
                      charge carrier diffusion lengths, low defect density and
                      intense photoluminescence. Si-based materials (c-Si, a-Si,
                      SixNy, SiCx and SiO2) play important roles in high
                      performance perovskite optoelectronic devices due to the
                      dominance of Si-based microelectronics and the important
                      role of Si-based solar cells in photovoltaics. Controlling
                      the preparation of perovskite materials on the dominant Si
                      optoelectronics platform is a crucial step to realize
                      practical perovskite-based optoelectronic devices. This
                      review highlights the recent progress in Si-based perovskite
                      optoelectronic devices including perovskite/Si tandem solar
                      cells, perovskite/Si photodetectors, perovskite/Si light
                      emitting diodes and optically pumped lasers. The remaining
                      challenge in Si-based perovskite optoelectronic devices
                      research are discussed.},
      cin          = {IEK-5},
      ddc          = {530},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {1212 - Materials and Interfaces (POF4-121)},
      pid          = {G:(DE-HGF)POF4-1212},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000693210800001},
      doi          = {10.1039/D1TA04527J},
      url          = {https://juser.fz-juelich.de/record/897251},
}