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024 7 _ |a 10.1039/D1TA04527J
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024 7 _ |a 2050-7496
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037 _ _ |a FZJ-2021-03713
082 _ _ |a 530
100 1 _ |a Liu, Jingjing
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245 _ _ |a Optoelectronic devices based on the integration of halide perovskites with silicon-based materials
260 _ _ |a London ˜[u.a.]œ
|c 2021
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520 _ _ |a Halide perovskites are widely used as an absorbing or emitting layer in emerging high-performance optoelectronic devices due to their high absorption coefficients, long charge carrier diffusion lengths, low defect density and intense photoluminescence. Si-based materials (c-Si, a-Si, SixNy, SiCx and SiO2) play important roles in high performance perovskite optoelectronic devices due to the dominance of Si-based microelectronics and the important role of Si-based solar cells in photovoltaics. Controlling the preparation of perovskite materials on the dominant Si optoelectronics platform is a crucial step to realize practical perovskite-based optoelectronic devices. This review highlights the recent progress in Si-based perovskite optoelectronic devices including perovskite/Si tandem solar cells, perovskite/Si photodetectors, perovskite/Si light emitting diodes and optically pumped lasers. The remaining challenge in Si-based perovskite optoelectronic devices research are discussed.
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700 1 _ |a Qu, Junle
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700 1 _ |a Kirchartz, Thomas
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700 1 _ |a Song, Jun
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773 _ _ |a 10.1039/D1TA04527J
|g Vol. 9, no. 37, p. 20919 - 20940
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|p 20919 - 20940
|t Journal of materials chemistry / A
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