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@ARTICLE{Ryu:902443,
author = {Ryu, Huije and Lee, Yangjin and Kim, Hyun-Jung and Kang,
Seoung-Hun and Kang, Yoongu and Kim, Kangwon and Kim,
Jungcheol and Janicek, Blanka E. and Watanabe, Kenji and
Taniguchi, Takashi and Huang, Pinshane Y. and Cheong,
Hyeonsik and Jung, In-Ho and Kim, Kwanpyo and Son, Young-Woo
and Lee, Gwan-Hyoung},
title = {{A}nomalous {D}imensionality‐{D}riven {P}hase
{T}ransition of {M}o{T}e 2 in {V}an der {W}aals
{H}eterostructure},
journal = {Advanced functional materials},
volume = {31},
number = {51},
issn = {1057-9257},
address = {Weinheim},
publisher = {Wiley-VCH},
reportid = {FZJ-2021-04265},
pages = {2107376},
year = {2021},
abstract = {Phase transition in nanomaterials is distinct from that in
3D bulk materials owing to the dominant contribution of
surface energy. Among nanomaterials, 2D materials have shown
unique phase transition behaviors due to their larger
surface-to-volume ratio, high crystallinity, and lack of
dangling bonds in atomically thin layers. Here, the
anomalous dimensionality-driven phase transition of
molybdenum ditelluride (MoTe2) encapsulated by hexagonal
boron nitride (hBN) is reported. After encapsulation
annealing, single-crystal 2H-MoTe2 transformed into
polycrystalline Td-MoTe2 with tilt-angle grain boundaries of
60°-glide-reflection and 120°-twofold rotation. In
contrast to conventional nanomaterials, the hBN-encapsulated
MoTe2 exhibit a deterministic dependence of the phase
transition on the number of layers, in which the thinner
MoTe2 has a higher 2H-to-Td phase transition temperature. In
addition, the vertical and lateral phase transitions of the
stacked MoTe2 with different crystalline orientations can be
controlled by inserted graphene layers and the thickness of
the heterostructure. Finally, it is shown that seamless Td
contacts for 2H-MoTe2 transistors can be fabricated by using
the dimensionality-driven phase transition. The work
provides insight into the phase transition of 2D materials
and van der Waals heterostructures and illustrates a novel
method for the fabrication of multi-phase 2D electronics.},
cin = {IAS-1 / PGI-1 / JARA-FIT / JARA-HPC},
ddc = {530},
cid = {I:(DE-Juel1)IAS-1-20090406 / I:(DE-Juel1)PGI-1-20110106 /
$I:(DE-82)080009_20140620$ / $I:(DE-82)080012_20140620$},
pnm = {5211 - Topological Matter (POF4-521)},
pid = {G:(DE-HGF)POF4-5211},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000695935100001},
doi = {10.1002/adfm.202107376},
url = {https://juser.fz-juelich.de/record/902443},
}