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@ARTICLE{Hpkes:902513,
      author       = {Hüpkes, Jürgen and Rau, Uwe and Kirchartz, Thomas},
      title        = {{D}ielectric {J}unction: {E}lectrostatic {D}esign for
                      {C}harge {C}arrier {C}ollection in {S}olar {C}ells},
      journal      = {Solar RRL},
      volume       = {6},
      number       = {1},
      issn         = {2367-198X},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2021-04322},
      pages        = {2100720 -},
      year         = {2022},
      abstract     = {Conventional solar cells typically use doping of the
                      involved semiconducting layers and work function differences
                      between highly conductive contacts for the electrostatic
                      design and the charge selectivity of the junction. In some
                      halide perovskite solar cells, however, substantial
                      variations in the permittivity of different organic and
                      inorganic semiconducting layers strongly affect the
                      electrostatic potential and thereby indirectly also the
                      carrier concentrations, recombination rates, and eventually
                      efficiencies of the device. Here, numerical simulations are
                      used to study the implications of electrostatics on device
                      performance for classical p−n junctions and p−i−n
                      junctions, and for device geometries as observed in
                      perovskite photovoltaics, where high-permittivity absorber
                      layers are surrounded by low-permittivity and often also
                      low-conductivity charge transport layers. The key principle
                      of device design in materials with sufficiently high
                      mobilities that are still dominated by defect-assisted
                      recombination is the minimization of volume with similar
                      densities of electrons and holes. In classical solar cells
                      this is achieved by doping. For perovskites, the concept of
                      a dielectric junction is proposed by the selection of charge
                      transport layers with adapted permittivity if doping is not
                      sufficient.},
      cin          = {IEK-5},
      ddc          = {600},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {1215 - Simulations, Theory, Optics, and Analytics (STOA)
                      (POF4-121)},
      pid          = {G:(DE-HGF)POF4-1215},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000719153200001},
      doi          = {10.1002/solr.202100720},
      url          = {https://juser.fz-juelich.de/record/902513},
}