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@ARTICLE{Chen:902589,
      author       = {Chen, Shaochuan and Valov, Ilia},
      title        = {{D}esign of {M}aterials {C}onfiguration for {O}ptimizing
                      {R}edox‐{B}ased {R}esistive {S}witching {M}emories},
      journal      = {Advanced materials},
      volume       = {34},
      number       = {3},
      issn         = {0935-9648},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2021-04384},
      pages        = {2105022},
      year         = {2022},
      abstract     = {Redox-based resistive random access memories (ReRAMs) are
                      based on electrochemical processes of oxidation and
                      reduction within the devices. The selection of materials and
                      material combinations strongly influence the related
                      nanoscale processes, playing a crucial role in resistive
                      switching properties and functionalities. To date, however,
                      comprehensive studies on device design accounting for a
                      combination of factors such as electrodes, electrolytes, and
                      capping layer materials related to their thicknesses and
                      interactions are scarce. In this work, the impact of
                      materials’ configuration on interfacial redox reactions in
                      HfO2-based electrochemical metallization memory (ECM) and
                      valence-change memory (VCM) systems is reported. The redox
                      processes are studied by cyclic voltammetry, and the
                      corresponding resistive switching characteristics are
                      investigated. In ECM cells, the overall cell resistance
                      depends on the electrocatalytic activity of the counter
                      electrode. Nonetheless, the capping layer material further
                      influences the cell resistance and the SET and RESET
                      voltages. In VCM systems, the influence of the electrode
                      material configuration is also pronounced, and is capable of
                      modulating the active resistive switching interface. For
                      both types of memory cells, the switching behavior changes
                      significantly with variation of the oxide thickness. The
                      results present important materials selection criteria for
                      rationale design of ReRAM cells for various memristive
                      applications.},
      cin          = {PGI-7 / JARA-FIT},
      ddc          = {660},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {5233 - Memristive Materials and Devices (POF4-523)},
      pid          = {G:(DE-HGF)POF4-5233},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {pmid:34695257},
      UT           = {WOS:000720734600001},
      doi          = {10.1002/adma.202105022},
      url          = {https://juser.fz-juelich.de/record/902589},
}