%0 Conference Paper
%A Qiu, Depeng
%A Duan, Weiyuan
%A Lambertz, Andreas
%A Bittkau, Karsten
%A Qiu, Kaifu
%A Ding, Kaining
%T Utilization of ultra-thin n-type Hydrogenated Nanocrystalline Silicon for Silicon Heterojunction Solar Cells
%I IEEE
%M FZJ-2021-04539
%P 0806-0808
%D 2021
%< 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC) : [Proceedings] - IEEE, 2021. - ISBN 978-1-6654-1922-2 - doi:10.1109/PVSC43889.2021.9518937
%X To optimize the electrical performance of silicon heterojunction solar cell devices, the electronic properties and microstructure of n-type nc-Si:H were characterized and analyzed. It was found that higher conductivity and crystalline volume fraction (Fc) of nc-Si:H can be obtained at lower silane gas fraction (fSiH4), lower power and higher phosphorous gas fraction (fPH3). In our case, there is a decline of the passivation for the devices with nc-Si:H after sputtering process. By increasing the phosphine flow fraction, the sputter damage can be reduced and 3%abs gain of FF as well as 0.7%abs gain of efficiency is reached compared with reference. The best solar cell exhibits the Voc of 733.3 mV, FF of 79.7%, Jsc of 39.00 mA/cm2 and η of 22.79% at the M2 size wafer.
%B 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)
%C 20 Jun 2021 - 25 Jun 2021, Fort Lauderdale (USA)
Y2 20 Jun 2021 - 25 Jun 2021
M2 Fort Lauderdale, USA
%F PUB:(DE-HGF)8 ; PUB:(DE-HGF)7
%9 Contribution to a conference proceedingsContribution to a book
%U <Go to ISI:>//WOS:000701690400185
%R 10.1109/PVSC43889.2021.9518937
%U https://juser.fz-juelich.de/record/902768