TY  - CONF
AU  - Qiu, Depeng
AU  - Duan, Weiyuan
AU  - Lambertz, Andreas
AU  - Bittkau, Karsten
AU  - Qiu, Kaifu
AU  - Ding, Kaining
TI  - Utilization of ultra-thin n-type Hydrogenated Nanocrystalline Silicon for Silicon Heterojunction Solar Cells
PB  - IEEE
M1  - FZJ-2021-04539
SP  - 0806-0808
PY  - 2021
AB  - To optimize the electrical performance of silicon heterojunction solar cell devices, the electronic properties and microstructure of n-type nc-Si:H were characterized and analyzed. It was found that higher conductivity and crystalline volume fraction (Fc) of nc-Si:H can be obtained at lower silane gas fraction (fSiH4), lower power and higher phosphorous gas fraction (fPH3). In our case, there is a decline of the passivation for the devices with nc-Si:H after sputtering process. By increasing the phosphine flow fraction, the sputter damage can be reduced and 3%abs gain of FF as well as 0.7%abs gain of efficiency is reached compared with reference. The best solar cell exhibits the Voc of 733.3 mV, FF of 79.7%, Jsc of 39.00 mA/cm2 and η of 22.79% at the M2 size wafer.
T2  - 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)
CY  - 20 Jun 2021 - 25 Jun 2021, Fort Lauderdale (USA)
Y2  - 20 Jun 2021 - 25 Jun 2021
M2  - Fort Lauderdale, USA
LB  - PUB:(DE-HGF)8 ; PUB:(DE-HGF)7
UR  - <Go to ISI:>//WOS:000701690400185
DO  - DOI:10.1109/PVSC43889.2021.9518937
UR  - https://juser.fz-juelich.de/record/902768
ER  -