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@INPROCEEDINGS{Qiu:902768,
      author       = {Qiu, Depeng and Duan, Weiyuan and Lambertz, Andreas and
                      Bittkau, Karsten and Qiu, Kaifu and Ding, Kaining},
      title        = {{U}tilization of ultra-thin n-type {H}ydrogenated
                      {N}anocrystalline {S}ilicon for {S}ilicon {H}eterojunction
                      {S}olar {C}ells},
      publisher    = {IEEE},
      reportid     = {FZJ-2021-04539},
      pages        = {0806-0808},
      year         = {2021},
      comment      = {2021 IEEE 48th Photovoltaic Specialists Conference (PVSC) :
                      [Proceedings] - IEEE, 2021. - ISBN 978-1-6654-1922-2 -
                      doi:10.1109/PVSC43889.2021.9518937},
      booktitle     = {2021 IEEE 48th Photovoltaic
                       Specialists Conference (PVSC) :
                       [Proceedings] - IEEE, 2021. - ISBN
                       978-1-6654-1922-2 -
                       doi:10.1109/PVSC43889.2021.9518937},
      abstract     = {To optimize the electrical performance of silicon
                      heterojunction solar cell devices, the electronic properties
                      and microstructure of n-type nc-Si:H were characterized and
                      analyzed. It was found that higher conductivity and
                      crystalline volume fraction (Fc) of nc-Si:H can be obtained
                      at lower silane gas fraction (fSiH4), lower power and higher
                      phosphorous gas fraction (fPH3). In our case, there is a
                      decline of the passivation for the devices with nc-Si:H
                      after sputtering process. By increasing the phosphine flow
                      fraction, the sputter damage can be reduced and $3\%abs$
                      gain of FF as well as $0.7\%abs$ gain of efficiency is
                      reached compared with reference. The best solar cell
                      exhibits the Voc of 733.3 mV, FF of $79.7\%,$ Jsc of 39.00
                      mA/cm2 and η of $22.79\%$ at the M2 size wafer.},
      month         = {Jun},
      date          = {2021-06-20},
      organization  = {2021 IEEE 48th Photovoltaic
                       Specialists Conference (PVSC), Fort
                       Lauderdale (USA), 20 Jun 2021 - 25 Jun
                       2021},
      cin          = {IEK-5},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {1213 - Cell Design and Development (POF4-121) /
                      Verbundvorhaben: Street - Einsatz von hocheffizienten
                      Solarzellen in elektrisch betriebenen Nutzfahrzeugen;
                      Teilvorhaben: Herstellung und Entwicklung von (0324275E) /
                      Verbundvorhaben: TuKaN - Tunnelkontakte auf N-Typ: für die
                      Metallisierung mit Siebdruck, Teilvorhaben: Herstellung von
                      Solarzellen mit passivierendem Tunnelkontakt und
                      funktionalen Schichten aus katalytischer und
                      plasmaunterstützter chemischer Gasphasenab (0324198D) /
                      Touch - Technologie- und Charakterisierungsplattform für
                      die Entwicklung von hoch-effizienten
                      Silizium-Heterostruktursolarzellen (0324351)},
      pid          = {G:(DE-HGF)POF4-1213 / G:(BMWi)0324275E / G:(BMWi)0324198D /
                      G:(BMWi)0324351},
      typ          = {PUB:(DE-HGF)8 / PUB:(DE-HGF)7},
      UT           = {WOS:000701690400185},
      doi          = {10.1109/PVSC43889.2021.9518937},
      url          = {https://juser.fz-juelich.de/record/902768},
}