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| Hauptseite > Publikationsdatenbank > Utilization of ultra-thin n-type Hydrogenated Nanocrystalline Silicon for Silicon Heterojunction Solar Cells > print |
| Hauptseite > Publikationsdatenbank > Utilization of ultra-thin n-type Hydrogenated Nanocrystalline Silicon for Silicon Heterojunction Solar Cells > print |
| 001 | 902768 | ||
| 005 | 20240712084527.0 | ||
| 024 | 7 | _ | |a 10.1109/PVSC43889.2021.9518937 |2 doi |
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| 037 | _ | _ | |a FZJ-2021-04539 |
| 100 | 1 | _ | |a Qiu, Depeng |0 P:(DE-Juel1)173822 |b 0 |e Corresponding author |u fzj |
| 111 | 2 | _ | |a 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC) |c Fort Lauderdale |d 2021-06-20 - 2021-06-25 |w USA |
| 245 | _ | _ | |a Utilization of ultra-thin n-type Hydrogenated Nanocrystalline Silicon for Silicon Heterojunction Solar Cells |
| 260 | _ | _ | |c 2021 |b IEEE |
| 295 | 1 | 0 | |a 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC) : [Proceedings] - IEEE, 2021. - ISBN 978-1-6654-1922-2 - doi:10.1109/PVSC43889.2021.9518937 |
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| 520 | _ | _ | |a To optimize the electrical performance of silicon heterojunction solar cell devices, the electronic properties and microstructure of n-type nc-Si:H were characterized and analyzed. It was found that higher conductivity and crystalline volume fraction (Fc) of nc-Si:H can be obtained at lower silane gas fraction (fSiH4), lower power and higher phosphorous gas fraction (fPH3). In our case, there is a decline of the passivation for the devices with nc-Si:H after sputtering process. By increasing the phosphine flow fraction, the sputter damage can be reduced and 3%abs gain of FF as well as 0.7%abs gain of efficiency is reached compared with reference. The best solar cell exhibits the Voc of 733.3 mV, FF of 79.7%, Jsc of 39.00 mA/cm2 and η of 22.79% at the M2 size wafer. |
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| 536 | _ | _ | |a Verbundvorhaben: Street - Einsatz von hocheffizienten Solarzellen in elektrisch betriebenen Nutzfahrzeugen; Teilvorhaben: Herstellung und Entwicklung von (0324275E) |0 G:(BMWi)0324275E |c 0324275E |x 1 |
| 536 | _ | _ | |a Verbundvorhaben: TuKaN - Tunnelkontakte auf N-Typ: für die Metallisierung mit Siebdruck, Teilvorhaben: Herstellung von Solarzellen mit passivierendem Tunnelkontakt und funktionalen Schichten aus katalytischer und plasmaunterstützter chemischer Gasphasenab (0324198D) |0 G:(BMWi)0324198D |c 0324198D |x 2 |
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| 773 | _ | _ | |a 10.1109/PVSC43889.2021.9518937 |
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