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000902769 1001_ $$0P:(DE-Juel1)179456$$aGebrewold, Habtamu Tsegaye$$b0$$eCorresponding author$$ufzj
000902769 1112_ $$a2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)$$cFort Lauderdale$$d2021-06-20 - 2021-06-25$$wUSA
000902769 245__ $$aNumerical study of Silicon Heterojunction Solar Cells with nc-SiC/SiO 2 Based Transparent Passivating Contact
000902769 260__ $$bIEEE$$c2021
000902769 300__ $$a1115-1117
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000902769 520__ $$aSilicon heterojunction with nc-SiC(n)/SiO2 based front transparent passivating contact (TPC) is numerically modeled. The model is then used to study the effect of active dopant concentration at the front and rear contact of the solar cell. A potential of power conversion efficiency above 25 % can be achieved with a suitable acceptor dopant concentration of p-type amorphous silicon at the rear side. Improving fill factor via SiC dopant concentration can enhance the cell power conversion efficiency within a narrow range of active dopant concentration. However, very high doping of SiC can affect the cell performance negatively.
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000902769 536__ $$0G:(BMWi)0324198D$$aVerbundvorhaben: TuKaN - Tunnelkontakte auf N-Typ: für die Metallisierung mit Siebdruck, Teilvorhaben: Herstellung von Solarzellen mit passivierendem Tunnelkontakt und funktionalen Schichten aus katalytischer und plasmaunterstützter chemischer Gasphasenab (0324198D)$$c0324198D$$x1
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000902769 7001_ $$0P:(DE-Juel1)130219$$aBittkau, Karsten$$b1$$ufzj
000902769 7001_ $$0P:(DE-Juel1)178049$$aQiu, Kaifu$$b2
000902769 7001_ $$0P:(DE-Juel1)130233$$aDing, Kaining$$b3$$ufzj
000902769 773__ $$a10.1109/PVSC43889.2021.9519034
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