TY  - CONF
AU  - Gebrewold, Habtamu Tsegaye
AU  - Bittkau, Karsten
AU  - Qiu, Kaifu
AU  - Ding, Kaining
TI  - Numerical study of Silicon Heterojunction Solar Cells with nc-SiC/SiO 2 Based Transparent Passivating Contact
PB  - IEEE
M1  - FZJ-2021-04540
SP  - 1115-1117
PY  - 2021
AB  - Silicon heterojunction with nc-SiC(n)/SiO2 based front transparent passivating contact (TPC) is numerically modeled. The model is then used to study the effect of active dopant concentration at the front and rear contact of the solar cell. A potential of power conversion efficiency above 25 % can be achieved with a suitable acceptor dopant concentration of p-type amorphous silicon at the rear side. Improving fill factor via SiC dopant concentration can enhance the cell power conversion efficiency within a narrow range of active dopant concentration. However, very high doping of SiC can affect the cell performance negatively.
T2  - 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)
CY  - 20 Jun 2021 - 25 Jun 2021, Fort Lauderdale (USA)
Y2  - 20 Jun 2021 - 25 Jun 2021
M2  - Fort Lauderdale, USA
LB  - PUB:(DE-HGF)8
UR  - <Go to ISI:>//WOS:000701690400255
DO  - DOI:10.1109/PVSC43889.2021.9519034
UR  - https://juser.fz-juelich.de/record/902769
ER  -