% IMPORTANT: The following is UTF-8 encoded. This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.
@INPROCEEDINGS{Gebrewold:902769,
author = {Gebrewold, Habtamu Tsegaye and Bittkau, Karsten and Qiu,
Kaifu and Ding, Kaining},
title = {{N}umerical study of {S}ilicon {H}eterojunction {S}olar
{C}ells with nc-{S}i{C}/{S}i{O} 2 {B}ased {T}ransparent
{P}assivating {C}ontact},
publisher = {IEEE},
reportid = {FZJ-2021-04540},
pages = {1115-1117},
year = {2021},
abstract = {Silicon heterojunction with nc-SiC(n)/SiO2 based front
transparent passivating contact (TPC) is numerically
modeled. The model is then used to study the effect of
active dopant concentration at the front and rear contact of
the solar cell. A potential of power conversion efficiency
above 25 $\%$ can be achieved with a suitable acceptor
dopant concentration of p-type amorphous silicon at the rear
side. Improving fill factor via SiC dopant concentration can
enhance the cell power conversion efficiency within a narrow
range of active dopant concentration. However, very high
doping of SiC can affect the cell performance negatively.},
month = {Jun},
date = {2021-06-20},
organization = {2021 IEEE 48th Photovoltaic
Specialists Conference (PVSC), Fort
Lauderdale (USA), 20 Jun 2021 - 25 Jun
2021},
cin = {IEK-5},
cid = {I:(DE-Juel1)IEK-5-20101013},
pnm = {1213 - Cell Design and Development (POF4-121) /
Verbundvorhaben: TuKaN - Tunnelkontakte auf N-Typ: für die
Metallisierung mit Siebdruck, Teilvorhaben: Herstellung von
Solarzellen mit passivierendem Tunnelkontakt und
funktionalen Schichten aus katalytischer und
plasmaunterstützter chemischer Gasphasenab (0324198D)},
pid = {G:(DE-HGF)POF4-1213 / G:(BMWi)0324198D},
typ = {PUB:(DE-HGF)8},
UT = {WOS:000701690400255},
doi = {10.1109/PVSC43889.2021.9519034},
url = {https://juser.fz-juelich.de/record/902769},
}