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| Hauptseite > Publikationsdatenbank > Numerical study of Silicon Heterojunction Solar Cells with nc-SiC/SiO 2 Based Transparent Passivating Contact > print |
| Hauptseite > Publikationsdatenbank > Numerical study of Silicon Heterojunction Solar Cells with nc-SiC/SiO 2 Based Transparent Passivating Contact > print |
| 001 | 902769 | ||
| 005 | 20240712084527.0 | ||
| 024 | 7 | _ | |a 10.1109/PVSC43889.2021.9519034 |2 doi |
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| 100 | 1 | _ | |a Gebrewold, Habtamu Tsegaye |0 P:(DE-Juel1)179456 |b 0 |e Corresponding author |u fzj |
| 111 | 2 | _ | |a 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC) |c Fort Lauderdale |d 2021-06-20 - 2021-06-25 |w USA |
| 245 | _ | _ | |a Numerical study of Silicon Heterojunction Solar Cells with nc-SiC/SiO 2 Based Transparent Passivating Contact |
| 260 | _ | _ | |c 2021 |b IEEE |
| 300 | _ | _ | |a 1115-1117 |
| 336 | 7 | _ | |a CONFERENCE_PAPER |2 ORCID |
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| 520 | _ | _ | |a Silicon heterojunction with nc-SiC(n)/SiO2 based front transparent passivating contact (TPC) is numerically modeled. The model is then used to study the effect of active dopant concentration at the front and rear contact of the solar cell. A potential of power conversion efficiency above 25 % can be achieved with a suitable acceptor dopant concentration of p-type amorphous silicon at the rear side. Improving fill factor via SiC dopant concentration can enhance the cell power conversion efficiency within a narrow range of active dopant concentration. However, very high doping of SiC can affect the cell performance negatively. |
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| 536 | _ | _ | |a Verbundvorhaben: TuKaN - Tunnelkontakte auf N-Typ: für die Metallisierung mit Siebdruck, Teilvorhaben: Herstellung von Solarzellen mit passivierendem Tunnelkontakt und funktionalen Schichten aus katalytischer und plasmaunterstützter chemischer Gasphasenab (0324198D) |0 G:(BMWi)0324198D |c 0324198D |x 1 |
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| 773 | _ | _ | |a 10.1109/PVSC43889.2021.9519034 |
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