TY  - CONF
AU  - Eberst, Alexander
AU  - Zamchiy, Alexandr
AU  - Qiu, Kaifu
AU  - Lambertz, Andreas
AU  - Duan, Weiyuan
AU  - Li, Shenghao
AU  - Bittkau, Karsten
AU  - Haas, Stefan
AU  - Finger, Friedhelm
AU  - Kirchartz, Thomas
AU  - Rau, Uwe
AU  - Ding, Kaining
TI  - Achieving a high Short Circuit Current Density of 40.9 mA/cm² for Two-Side Contacted Silicon Heterojunction Solar Cells by using SiC-based Transparent Passivating Contacts
M1  - FZJ-2021-04541
SP  - 0300-0302
PY  - 2021
AB  - A silicon heterojunction solar cell using silicon carbide as front contact is presented, which features the main advantage of high transparency. To enhance this advantage, an optical loss analysis is performed. It is found that reflection losses play an important role for the solar cell, which can easily be reduced by applying an additional MgF2 coating. The deposition of the coating degrades the passivation quality of the contact but can be cured, eventually leading to a certified short circuit current density of 40.9 mA/cm² and efficiency of 23.99%. Afterwards, a roadmap to a theoretical efficiency of 25% is presented.
T2  - 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)
CY  - 20 Jun 2021 - 25 Jun 2021, Fort Lauderdale (FL)
Y2  - 20 Jun 2021 - 25 Jun 2021
M2  - Fort Lauderdale, FL
LB  - PUB:(DE-HGF)8 ; PUB:(DE-HGF)7
UR  - <Go to ISI:>//WOS:000701690400070
DO  - DOI:10.1109/PVSC43889.2021.9518496
UR  - https://juser.fz-juelich.de/record/902770
ER  -