% IMPORTANT: The following is UTF-8 encoded. This means that in the presence % of non-ASCII characters, it will not work with BibTeX 0.99 or older. % Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or % “biber”. @INPROCEEDINGS{Eberst:902770, author = {Eberst, Alexander and Zamchiy, Alexandr and Qiu, Kaifu and Lambertz, Andreas and Duan, Weiyuan and Li, Shenghao and Bittkau, Karsten and Haas, Stefan and Finger, Friedhelm and Kirchartz, Thomas and Rau, Uwe and Ding, Kaining}, title = {{A}chieving a high {S}hort {C}ircuit {C}urrent {D}ensity of 40.9 m{A}/cm² for {T}wo-{S}ide {C}ontacted {S}ilicon {H}eterojunction {S}olar {C}ells by using {S}i{C}-based {T}ransparent {P}assivating {C}ontacts}, reportid = {FZJ-2021-04541}, pages = {0300-0302}, year = {2021}, comment = {2021 IEEE 48th Photovoltaic Specialists Conference (PVSC) : [Proceedings] - IEEE, 2021. - ISBN 978-1-6654-1922-2 - doi:10.1109/PVSC43889.2021.9518496}, booktitle = {2021 IEEE 48th Photovoltaic Specialists Conference (PVSC) : [Proceedings] - IEEE, 2021. - ISBN 978-1-6654-1922-2 - doi:10.1109/PVSC43889.2021.9518496}, abstract = {A silicon heterojunction solar cell using silicon carbide as front contact is presented, which features the main advantage of high transparency. To enhance this advantage, an optical loss analysis is performed. It is found that reflection losses play an important role for the solar cell, which can easily be reduced by applying an additional MgF2 coating. The deposition of the coating degrades the passivation quality of the contact but can be cured, eventually leading to a certified short circuit current density of 40.9 mA/cm² and efficiency of $23.99\%.$ Afterwards, a roadmap to a theoretical efficiency of $25\%$ is presented.}, month = {Jun}, date = {2021-06-20}, organization = {2021 IEEE 48th Photovoltaic Specialists Conference (PVSC), Fort Lauderdale (FL), 20 Jun 2021 - 25 Jun 2021}, cin = {IEK-5}, cid = {I:(DE-Juel1)IEK-5-20101013}, pnm = {1213 - Cell Design and Development (POF4-121) / Verbundvorhaben: TuKaN - Tunnelkontakte auf N-Typ: für die Metallisierung mit Siebdruck, Teilvorhaben: Herstellung von Solarzellen mit passivierendem Tunnelkontakt und funktionalen Schichten aus katalytischer und plasmaunterstützter chemischer Gasphasenab (0324198D)}, pid = {G:(DE-HGF)POF4-1213 / G:(BMWi)0324198D}, typ = {PUB:(DE-HGF)8 / PUB:(DE-HGF)7}, UT = {WOS:000701690400070}, doi = {10.1109/PVSC43889.2021.9518496}, url = {https://juser.fz-juelich.de/record/902770}, }