% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Kulkarni:902964,
      author       = {Kulkarni, Ashish and Ünlü, Feray and Pant, Namrata and
                      Kaur, Jagjit and Bohr, Christoph and Jena, Ajay Kumar and
                      Öz, Senol and Yanagida, Masatoshi and Shirai, Yasuhiro and
                      Ikegami, Masashi and Miyano, Kenjiro and Tachibana, Yasuhiro
                      and Chakraborty, Sudip and Mathur, Sanjay and Miyasaka,
                      Tsutomu},
      title        = {{C}oncerted {I}on {M}igration and {D}iffusion‐{I}nduced
                      {D}egradation in {L}ead‐{F}ree {A}g 3 {B}i{I} 6
                      {R}udorffite {S}olar {C}ells under {A}mbient {C}onditions},
      journal      = {Solar RRL},
      volume       = {5},
      number       = {8},
      issn         = {2367-198X},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2021-04710},
      pages        = {2100077},
      year         = {2021},
      abstract     = {Silver bismuth iodide (SBI) materials have recently gained
                      attention as nontoxic alternatives to lead perovskites.
                      Although most of the studies have been focusing on
                      photovoltaic performance, the inherent ionic nature of SBI
                      materials, their diffusive behavior, and influence on
                      material/device stability is underexplored. Herein, AgBi2I7,
                      Ag2BiI5, and Ag3BiI6 thin films are developed in controlled
                      ambient humidity conditions with a decent efficiency up to
                      $2.32\%.$ While exploring the device stability, it is found
                      that Ag3BiI6 exhibits a unique ion-migration behavior where
                      Ag+, Bi3+, and I− ions migrate and diffuse through the
                      dopant-free hole transport layer (HTL) leading to
                      degradation. Interestingly, this ion-migration behavior is
                      relatively fast for the case of antisolvent-processed
                      Ag3BiI6 thin-film-based devices contrasting the case of
                      without antisolvent and is not observed for other SBI
                      material-based devices. Theoretical calculations suggest
                      that low decomposition enthalpy favors the decomposition of
                      Ag3BiI6 to AgI and BiI3 causing migration of ions to the
                      electrode which is protected by using a thick HTL . The
                      new mechanism reported herein underlines the importance of
                      SBI material composition and fundamental mechanism
                      understanding on the stability of Ag3BiI6 material for
                      better solar cell design and also in extending the
                      applications of unique ion-migration behavior in various
                      optoelectronics.},
      cin          = {IEK-5},
      ddc          = {600},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {1212 - Materials and Interfaces (POF4-121)},
      pid          = {G:(DE-HGF)POF4-1212},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000670791900001},
      doi          = {10.1002/solr.202100077},
      url          = {https://juser.fz-juelich.de/record/902964},
}