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@ARTICLE{Yu:902981,
      author       = {Yu, Jian and Peris, Sunny Leonard and Qiu, Depeng and Zhao,
                      Yilin and Lambertz, Andreas and Zahren, Christoph and
                      Lauterbach, Volker and Duan, Weiyuan and Yu, Junsheng and
                      Ding, Kaining},
      title        = {{L}ight-induced performance of {SHJ} solar modules under
                      2000 h illumination},
      journal      = {Solar energy materials $\&$ solar cells},
      volume       = {235},
      issn         = {0927-0248},
      address      = {Amsterdam [u.a.]},
      publisher    = {NH, Elsevier},
      reportid     = {FZJ-2021-04727},
      pages        = {111459},
      year         = {2022},
      abstract     = {The light-induced degradation (LID) of solar module leads
                      to severe loss in generated power due to the formation of
                      recombination active defects. The silicon heterojunction
                      (SHJ) solar cells based on n-type wafers are less affected
                      by the LID test. In this paper, the glass/back sheet
                      structure (GBS) modules with different encapsulant materials
                      (TPO, POE, EVA) were laminated to evaluate their performance
                      changes under 2000 h light soaking stress for the first
                      time. The current-voltage (light I–V, dark I–V)
                      parameters of the modules were measured, as well as the
                      external quantum efficiency (EQE) and electroluminescence
                      (EL), to verify the effect of light irradiation on SHJ solar
                      modules. The SHJ modules with different encapsulant
                      materials show excellent light-induced reliability. There is
                      no degradation after 2000 h light irradiation, and even
                      exhibits light-induced performance increase. The gain in
                      output power (Pmax) is up to $1.41\%,$ which is primarily
                      due to an improved open-circuit Voltage (Voc) and fill
                      factor (FF) as the result of a reduced density of
                      recombination-active interface states. The front sheet/back
                      sheet (FBS) modules also verified the accumulated
                      light-induced stress could result in deteriorating
                      interconnection between SHJ solar cell and ribbon, which
                      suffers from significant output power degradation. The
                      LID-free SHJ solar cells show great potential for lower
                      levelized cost of energy (LCOE) of photovoltaic power
                      generation.},
      cin          = {IEK-5},
      ddc          = {620},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {1213 - Cell Design and Development (POF4-121)},
      pid          = {G:(DE-HGF)POF4-1213},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000718177800003},
      doi          = {10.1016/j.solmat.2021.111459},
      url          = {https://juser.fz-juelich.de/record/902981},
}