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@ARTICLE{Wu:902985,
      author       = {Wu, Zhuopeng and Duan, Weiyuan and Lambertz, Andreas and
                      Qiu, Depeng and Pomaska, Manuel and Yao, Zhirong and Rau,
                      Uwe and Zhang, Liping and Liu, Zhengxin and Ding, Kaining},
      title        = {{L}ow-resistivity p-type a-{S}i:{H}/{AZO} hole contact in
                      high-efficiency silicon heterojunction solar cells},
      journal      = {Applied surface science},
      volume       = {542},
      issn         = {0169-4332},
      address      = {Amsterdam},
      publisher    = {Elsevier},
      reportid     = {FZJ-2021-04731},
      pages        = {148749},
      year         = {2021},
      abstract     = {Decreasing the contact resistance between hydrogenated
                      amorphous silicon (a-Si:H) and transparent conductive oxide
                      film (TCO) is beneficial for achieving high efficiency
                      silicon heterojunction (SHJ) solar cells. This study reports
                      the implementation of trimethyl boron B(CH3)3 (TMB) doped
                      p-type a-Si:H (a-Si:H(p)) film as hole transport layer
                      contacting with indium-free aluminum doped zinc oxide (AZO)
                      in SHJ solar cells. The influence of doping concentration on
                      the nanostructure of a-Si:H(p), TCO/a-Si:H(p) contact
                      resistivity as well as the resultant cell performance was
                      systematically investigated. It was found that excessive TMB
                      doping results in more carbon and voids inside the films and
                      reduces the doping efficiency, lowering the conductivity and
                      increasing the contact resistivity. a-Si:H(p) film with low
                      defect density and high doping level was obtained at a
                      moderate doping concentration, which facilitates tunneling
                      transport for holes to overcome the high energy barrier at
                      the a-Si:H(p)/AZO interface and results in a low contact
                      resistivity down to 0.14 Ωcm2. The optimized
                      low-resistivity a-Si:H(p)/AZO contact enables a fill factor
                      above $81\%$ and efficiency of $23.6\%$ for M2 SHJ solar
                      cells, which is comparable with $23.7\%-efficient$ cells
                      using traditional tin doped indium oxide (ITO). To our
                      knowledge, this is the highest efficiency for
                      AZO-implemented SHJ cells without double anti-reflection
                      layer and silver back reflector. This work provides design
                      principles on how to achieve high-efficiency SHJ cells with
                      low resistive loss at the hole contact side via doping
                      engineering.},
      cin          = {IEK-5},
      ddc          = {660},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {1213 - Cell Design and Development (POF4-121)},
      pid          = {G:(DE-HGF)POF4-1213},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000608516100006},
      doi          = {10.1016/j.apsusc.2020.148749},
      url          = {https://juser.fz-juelich.de/record/902985},
}