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@ARTICLE{Qiu:902989,
      author       = {Qiu, Depeng and Duan, Weiyuan and Lambertz, Andreas and Wu,
                      Zhuopeng and Bittkau, Karsten and Qiu, Kaifu and Yao,
                      Zhirong and Rau, Uwe and Ding, Kaining},
      title        = {{F}unction {A}nalysis of the {P}hosphine {G}as {F}low for
                      n-{T}ype {N}anocrystalline {S}ilicon {O}xide {L}ayer in
                      {S}ilicon {H}eterojunction {S}olar {C}ells},
      journal      = {ACS applied energy materials},
      volume       = {4},
      number       = {8},
      issn         = {2574-0962},
      address      = {Washington, DC},
      publisher    = {ACS Publications},
      reportid     = {FZJ-2021-04735},
      pages        = {7544 - 7551},
      year         = {2021},
      abstract     = {The energy conversion efficiency (η) of silicon
                      heterojunction (SHJ) solar cells is limited by the current
                      losses in the layer stack on the illuminated side. To reduce
                      these losses, hydrogenated nanocrystalline silicon oxide
                      (nc-SiOx:H) was implemented as a window layer in SHJ solar
                      cells. However, the integration of nc-SiOx:H in devices
                      without degradation of fill factor (FF) is still a
                      challenge. To optimize the electron performance of devices,
                      the optoelectronic properties and microstructure of
                      nc-SiOx:H were characterized and analyzed systematically. It
                      was found that the PH3 gas fraction (fPH3) plays a big role
                      on the microstructure, oxygen content, and phosphorus (P)
                      doping efficiency of the films. The highest conductivity,
                      2.84 × 10–1 S/cm, is obtained at a moderate fPH3 with an
                      optical band gap of 2.26 eV. A ternary model was creatively
                      used to show the variation in the composition of nc-SiOx:H
                      as tuning fPH3. The growth of crystalline phase was
                      accelerated by the P dopants when fPH3 is low, but further
                      increasing fPH3 leads to excessive P inactive dopants,
                      causing a phase transition from nanocrystalline silicon to
                      amorphous silicon in nc-SiOx:H. In this work, the best solar
                      cell with an nc-SiOx:H window layer achieves an FF of
                      $81.4\%,$ a short current density (Jsc) of 39.8 mA/cm2, an
                      open-circuit voltage (Voc) of 731 mV, and an η of $23.7\%$
                      at the moderate fPH3. A decrease in FF and Jsc is shown with
                      higher fPH3, which is the consequence of the increased front
                      contact resistivity and decreased optical band gap of
                      nc-SiOx:H window layer.},
      cin          = {IEK-5},
      ddc          = {540},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {1213 - Cell Design and Development (POF4-121)},
      pid          = {G:(DE-HGF)POF4-1213},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000688250200015},
      doi          = {10.1021/acsaem.1c00654},
      url          = {https://juser.fz-juelich.de/record/902989},
}