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@ARTICLE{Seidel:903133,
      author       = {Seidel, Sarah and Schmid, Alexander and Miersch, Christian
                      and Schubert, Jürgen and Heitmann, Johannes},
      title        = {{A}l{G}a{N}/{G}a{N} {MISHEMT}s with epitaxially grown
                      {G}d{S}c{O} 3 as high- κ dielectric},
      journal      = {Applied physics letters},
      volume       = {118},
      number       = {5},
      issn         = {0003-6951},
      address      = {Melville, NY},
      publisher    = {American Inst. of Physics},
      reportid     = {FZJ-2021-04857},
      pages        = {052902 -},
      year         = {2021},
      abstract     = {Epitaxially grown GdScO3 was integrated in a GaN-based
                      metal-insulator-semiconductor high electron mobility
                      transistor as a high-κ gate passivation layer.
                      Microstructural investigations using transmission electron
                      microscopy and x-ray diffraction confirm the epitaxial
                      growth of GdScO3 on GaN deposited by pulsed laser deposition
                      on the AlGaN-GaN heterostructure. The
                      metal-insulator-semiconductor high electron mobility
                      transistor was compared to unpassivated and to Al2O3
                      passivated high electron mobility transistors. A layer of
                      20 nm GdScO3 reduces the gate leakage current below the
                      level of the Al2O3 passivated transistors and below the
                      off-current of the high electron mobility transistor without
                      any gate dielectric. Time-dependent measurements show a
                      strong dependence of the drain leakage current in the
                      off-state on light illumination, which indicates slow
                      trapping effects in GdScO3 or at the GdScO3–GaN
                      interface.AlGaN/GaN high electron mobility transistors
                      (HEMTs) have attracted a lot of interest over the last few
                      years. Despite the excellent material properties of GaN,
                      such as the high breakdown field, especially the formation
                      of a two-dimensional electron gas (2DEG) at the AlGaN–GaN
                      interface has motivated intensive studies. Due to
                      spontaneous and piezoelectric polarization at the interface,
                      the conduction band of GaN bends below the Fermi level and
                      creates a highly conductive electron channel, which enables
                      high frequency switching devices.1 Intensive studies have
                      been conducted to improve the performance of AlGaN/GaN high
                      electron mobility transistors (HEMTs) by implementing an
                      additional dielectric layer underneath the gate in a
                      so-called metal insulator high electron mobility transistor
                      (MISHEMT).},
      cin          = {PGI-9},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {5233 - Memristive Materials and Devices (POF4-523)},
      pid          = {G:(DE-HGF)POF4-5233},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000630485900002},
      doi          = {10.1063/5.0037692},
      url          = {https://juser.fz-juelich.de/record/903133},
}