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@ARTICLE{Hensling:903136,
      author       = {Hensling, Felix V. E. and Dahliah, Diana and Dulal, Prabin
                      and Singleton, Patrick and Sun, Jiaxin and Schubert, Jürgen
                      and Paik, Hanjong and Subedi, Indra and Subedi, Biwas and
                      Rignanese, Gian-Marco and Podraza, Nikolas J. and Hautier,
                      Geoffroy and Schlom, Darrell G.},
      title        = {{E}pitaxial stannate pyrochlore thin films: {L}imitations
                      of cation stoichiometry and electron doping},
      journal      = {APL materials},
      volume       = {9},
      number       = {5},
      issn         = {2166-532X},
      address      = {Melville, NY},
      publisher    = {AIP Publ.},
      reportid     = {FZJ-2021-04860},
      pages        = {051113 -},
      year         = {2021},
      abstract     = {We have studied the growth of epitaxial films of stannate
                      pyrochlores with a general formula A 2 Sn 2 O 7 (A = La and
                      Y) and find that itis possible to incorporate ∼ $25\%$
                      excess of the A-site constituent; in contrast, any tin
                      excess is expelled. We unravel the defect chemistry,allowing
                      for the incorporation of excess A-site species and the
                      mechanism behind the tin expulsion. An A-site surplus is
                      manifested by ashift in the film diffraction peaks, and the
                      expulsion of tin is apparent from the surface morphology of
                      the film. In an attempt to increaseLa 2 Sn 2 O 7
                      conductivity through n-type doping, substantial quantities
                      of tin have been substituted by antimony while maintaining
                      good filmquality. The sample remained insulating as
                      explained by first-principles computations, showing that
                      both the oxygen vacancy and antimony-on-tin substitutional
                      defects are deep. Similar conclusions are drawn on Y 2 Sn 2
                      O 7 . An alternative n-type dopant, fluorine on oxygen, is
                      shallowaccording to computations and more likely to lead to
                      electrical conductivity. The bandgaps of stoichiometric La 2
                      Sn 2 O 7 and Y 2 Sn 2 O 7 filmswere determined by
                      spectroscopic ellipsometry to be 4.2 eV and 4.48 eV,
                      respectively.},
      cin          = {PGI-9},
      ddc          = {600},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {5233 - Memristive Materials and Devices (POF4-523)},
      pid          = {G:(DE-HGF)POF4-5233},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000705895700002},
      doi          = {10.1063/5.0049334},
      url          = {https://juser.fz-juelich.de/record/903136},
}