000903222 001__ 903222
000903222 005__ 20240712084453.0
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000903222 020__ $$a978-3-95806-591-8
000903222 037__ $$aFZJ-2021-04929
000903222 1001_ $$0P:(DE-Juel1)168198$$aLiu, Yong$$b0$$eCorresponding author
000903222 245__ $$aCatalytic-doping of Silicon Alloys for the Use in Silicon Heterojunction Solar Cells$$f- 2022-01-12
000903222 260__ $$aJülich$$bForschungszentrum Jülich GmbH Zentralbibliothek, Verlag$$c2021
000903222 300__ $$a126
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000903222 4900_ $$aSchriften des Forschungszentrums Jülich Reihe Energie & Umwelt / Energy & Environment$$v556
000903222 502__ $$aDissertation, RWTH Aachen University, 2021$$bDissertation$$cRWTH Aachen University$$d2021
000903222 520__ $$aTo make this planet cleaner and more sustainable, photovoltaic (PV) has longbeen on its road to pursue higher eciency () and larger market share. Siliconheterojunction (SHJ) solar cell is considered as one of the most promising candidatesas next-generation high-eciency PV techniques due to their high eciencies andsimple production sequences. Eciency over 26% in research level and over 23% inmass production have been achieved based on SHJ concept. However, there are stillseveral eciency-limiting issues for SHJ solar cells. The rst one is the parasiticabsorption in short wavelength range caused by front side doped amorphous(a-Si:H)layers. Many new materials (such as c-Si:H, nc-SiOx:H and c-SiC:H) have beenproposed to overcome this problem, yet the trade-o between optical and electricalproperties still exists. The second one is that sucient thickness of a-Si:H(i) layeris needed for good passivation, but the a-Si:H(i) layer acts as isolation for electricaltransport. Therefore, another trade-o exists between passivation and electricaltransport.
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