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@ARTICLE{Moutanabbir:903461,
      author       = {Moutanabbir, O. and Assali, S. and Gong, X. and O'Reilly,
                      E. and Broderick, C. A. and Marzban, B. and Witzens, J. and
                      Du, W. and Yu, S-Q. and Chelnokov, A. and Buca, D. and Nam,
                      D.},
      title        = {{M}onolithic infrared silicon photonics: {T}he rise of
                      ({S}i){G}e{S}n semiconductors},
      journal      = {Applied physics letters},
      volume       = {118},
      number       = {11},
      issn         = {0003-6951},
      address      = {Melville, NY},
      publisher    = {American Inst. of Physics},
      reportid     = {FZJ-2021-05134},
      pages        = {110502 -},
      year         = {2021},
      abstract     = {(Si)GeSn semiconductors are finally coming of age after a
                      long gestation period. The demonstration of device-quality
                      epi-layers andquantum-engineered heterostructures has meant
                      that tunable all-group IV Si-integrated infrared photonics
                      is now a real possibility.Notwithstanding the recent
                      exciting developments in (Si)GeSn materials and devices,
                      this family of semiconductors is still facing serious
                      limitationsthat need to be addressed to enable reliable and
                      scalable applications. The main outstanding challenges
                      include the difficulty to growhigh-crystalline quality
                      layers and heterostructures at the desired content and
                      lattice strain, preserve the material integrity during
                      growth andthroughout device processing steps, and control
                      doping and defect density. Other challenges are related to
                      the lack of optimized devicedesigns and predictive
                      theoretical models to evaluate and simulate the fundamental
                      properties and performance of (Si)GeSn layers and
                      heterostructures.This Perspective highlights key strategies
                      to circumvent these hurdles and hopefully bring this
                      material system to maturity to createfar-reaching
                      opportunities for Si-compatible infrared photodetectors,
                      sensors, and emitters for applications in free-space
                      communication,infrared harvesting, biological and chemical
                      sensing, and thermal imaging.},
      cin          = {PGI-9},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {5234 - Emerging NC Architectures (POF4-523) / SiGeSn Laser
                      für die Silizium Photonik (299480227)},
      pid          = {G:(DE-HGF)POF4-5234 / G:(GEPRIS)299480227},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000631044800001},
      doi          = {10.1063/5.0043511},
      url          = {https://juser.fz-juelich.de/record/903461},
}