%0 Journal Article
%A Talamas Simola, Enrico
%A Kiyek, Vivien
%A Ballabio, Andrea
%A Schlykow, Viktoria
%A Frigerio, Jacopo
%A Zucchetti, Carlo
%A De Iacovo, Andrea
%A Colace, Lorenzo
%A Yamamoto, Yuji
%A Capellini, Giovanni
%A Grützmacher, Detlev
%A Buca, Dan
%A Isella, Giovanni
%T CMOS-Compatible Bias-Tunable Dual-Band Detector Based on GeSn/Ge/Si Coupled Photodiodes
%J ACS photonics
%V 8
%N 7
%@ 2330-4022
%C Washington, DC
%I ACS
%M FZJ-2021-05141
%P 2166 - 2173
%D 2021
%X Infrared (IR) multispectral detection is attractingincreasing interest with the rising demand for high spectralsensitivity, room temperature operation, CMOS-compatible devices.Here, we present a two-terminal dual-band detector, which providesa bias-switchable spectral response in two distinct IR bands. Thedevice is obtained from a vertical GeSn/Ge/Si stack, forming adouble junction n-i-p-i-n structure, epitaxially grown on a Si wafer.The photoresponse can be switched by inverting the bias polaritybetween the near and the short-wave IR bands, with specificdetectivities of 1.9 × 1010 and 4.0 × 109 cm·(Hz)1/2/W, respectively.The possibility of detecting two spectral bands with the same pixelopens up interesting applications in the field of IR imaging andmaterial recognition, as shown in a solvent detection test. Thecontinuous voltage tuning, combined with the nonlinear photoresponse of the detector, enables a novel approach to spectral analysis,demonstrated by identifying the wavelength of a monochromatic beam.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000677543700038
%R 10.1021/acsphotonics.1c00617
%U https://juser.fz-juelich.de/record/903469