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000903469 1001_ $$0P:(DE-HGF)0$$aTalamas Simola, Enrico$$b0$$eCorresponding author
000903469 245__ $$aCMOS-Compatible Bias-Tunable Dual-Band Detector Based on GeSn/Ge/Si Coupled Photodiodes
000903469 260__ $$aWashington, DC$$bACS$$c2021
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000903469 520__ $$aInfrared (IR) multispectral detection is attractingincreasing interest with the rising demand for high spectralsensitivity, room temperature operation, CMOS-compatible devices.Here, we present a two-terminal dual-band detector, which providesa bias-switchable spectral response in two distinct IR bands. Thedevice is obtained from a vertical GeSn/Ge/Si stack, forming adouble junction n-i-p-i-n structure, epitaxially grown on a Si wafer.The photoresponse can be switched by inverting the bias polaritybetween the near and the short-wave IR bands, with specificdetectivities of 1.9 × 1010 and 4.0 × 109 cm·(Hz)1/2/W, respectively.The possibility of detecting two spectral bands with the same pixelopens up interesting applications in the field of IR imaging andmaterial recognition, as shown in a solvent detection test. Thecontinuous voltage tuning, combined with the nonlinear photoresponse of the detector, enables a novel approach to spectral analysis,demonstrated by identifying the wavelength of a monochromatic beam.
000903469 536__ $$0G:(DE-HGF)POF4-5234$$a5234 - Emerging NC Architectures (POF4-523)$$cPOF4-523$$fPOF IV$$x0
000903469 536__ $$0G:(BMBF)13N14159$$aVerbundprojekt: Nanostrukturierte GeSn Beschichtungen für die Photonik (GESNAPHOTO) - Teilvorhaben: Entwicklung neuartiger Detektoren und Emitter basierend auf GeSn Schichtstrukturen (13N14159)$$c13N14159$$x1
000903469 536__ $$0G:(BMBF)16ES1074$$aVerbundprojekt: Erforschung nanoelektronischer Höchstleistungs-Bauelemente für innovative Elektronik auf Basis neuer Materialsysteme - ForMikro-SiGeSn-NanoFETs - , Teilvorhaben: CVD-basierte Herstellung von SiGeSn-Halbleiterheterostrukturen und vertikalen (16ES1074)$$c16ES1074$$x2
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000903469 65017 $$0V:(DE-MLZ)GC-120-2016$$2V:(DE-HGF)$$aInformation and Communication$$x0
000903469 7001_ $$0P:(DE-Juel1)180877$$aKiyek, Vivien$$b1
000903469 7001_ $$0P:(DE-HGF)0$$aBallabio, Andrea$$b2
000903469 7001_ $$0P:(DE-HGF)0$$aSchlykow, Viktoria$$b3
000903469 7001_ $$0P:(DE-HGF)0$$aFrigerio, Jacopo$$b4
000903469 7001_ $$0P:(DE-HGF)0$$aZucchetti, Carlo$$b5
000903469 7001_ $$0P:(DE-HGF)0$$aDe Iacovo, Andrea$$b6
000903469 7001_ $$0P:(DE-HGF)0$$aColace, Lorenzo$$b7
000903469 7001_ $$0P:(DE-HGF)0$$aYamamoto, Yuji$$b8
000903469 7001_ $$0P:(DE-HGF)0$$aCapellini, Giovanni$$b9
000903469 7001_ $$0P:(DE-Juel1)125588$$aGrützmacher, Detlev$$b10
000903469 7001_ $$0P:(DE-Juel1)125569$$aBuca, Dan$$b11$$eCorresponding author
000903469 7001_ $$0P:(DE-HGF)0$$aIsella, Giovanni$$b12
000903469 773__ $$0PERI:(DE-600)2745489-7$$a10.1021/acsphotonics.1c00617$$gVol. 8, no. 7, p. 2166 - 2173$$n7$$p2166 - 2173$$tACS photonics$$v8$$x2330-4022$$y2021
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