TY  - JOUR
AU  - Talamas Simola, Enrico
AU  - Kiyek, Vivien
AU  - Ballabio, Andrea
AU  - Schlykow, Viktoria
AU  - Frigerio, Jacopo
AU  - Zucchetti, Carlo
AU  - De Iacovo, Andrea
AU  - Colace, Lorenzo
AU  - Yamamoto, Yuji
AU  - Capellini, Giovanni
AU  - Grützmacher, Detlev
AU  - Buca, Dan
AU  - Isella, Giovanni
TI  - CMOS-Compatible Bias-Tunable Dual-Band Detector Based on GeSn/Ge/Si Coupled Photodiodes
JO  - ACS photonics
VL  - 8
IS  - 7
SN  - 2330-4022
CY  - Washington, DC
PB  - ACS
M1  - FZJ-2021-05141
SP  - 2166 - 2173
PY  - 2021
AB  - Infrared (IR) multispectral detection is attractingincreasing interest with the rising demand for high spectralsensitivity, room temperature operation, CMOS-compatible devices.Here, we present a two-terminal dual-band detector, which providesa bias-switchable spectral response in two distinct IR bands. Thedevice is obtained from a vertical GeSn/Ge/Si stack, forming adouble junction n-i-p-i-n structure, epitaxially grown on a Si wafer.The photoresponse can be switched by inverting the bias polaritybetween the near and the short-wave IR bands, with specificdetectivities of 1.9 × 1010 and 4.0 × 109 cm·(Hz)1/2/W, respectively.The possibility of detecting two spectral bands with the same pixelopens up interesting applications in the field of IR imaging andmaterial recognition, as shown in a solvent detection test. Thecontinuous voltage tuning, combined with the nonlinear photoresponse of the detector, enables a novel approach to spectral analysis,demonstrated by identifying the wavelength of a monochromatic beam.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000677543700038
DO  - DOI:10.1021/acsphotonics.1c00617
UR  - https://juser.fz-juelich.de/record/903469
ER  -