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@ARTICLE{TalamasSimola:903469,
      author       = {Talamas Simola, Enrico and Kiyek, Vivien and Ballabio,
                      Andrea and Schlykow, Viktoria and Frigerio, Jacopo and
                      Zucchetti, Carlo and De Iacovo, Andrea and Colace, Lorenzo
                      and Yamamoto, Yuji and Capellini, Giovanni and Grützmacher,
                      Detlev and Buca, Dan and Isella, Giovanni},
      title        = {{CMOS}-{C}ompatible {B}ias-{T}unable {D}ual-{B}and
                      {D}etector {B}ased on {G}e{S}n/{G}e/{S}i {C}oupled
                      {P}hotodiodes},
      journal      = {ACS photonics},
      volume       = {8},
      number       = {7},
      issn         = {2330-4022},
      address      = {Washington, DC},
      publisher    = {ACS},
      reportid     = {FZJ-2021-05141},
      pages        = {2166 - 2173},
      year         = {2021},
      abstract     = {Infrared (IR) multispectral detection is
                      attractingincreasing interest with the rising demand for
                      high spectralsensitivity, room temperature operation,
                      CMOS-compatible devices.Here, we present a two-terminal
                      dual-band detector, which providesa bias-switchable spectral
                      response in two distinct IR bands. Thedevice is obtained
                      from a vertical GeSn/Ge/Si stack, forming adouble junction
                      n-i-p-i-n structure, epitaxially grown on a Si wafer.The
                      photoresponse can be switched by inverting the bias
                      polaritybetween the near and the short-wave IR bands, with
                      specificdetectivities of 1.9 × 1010 and 4.0 × 109
                      cm·(Hz)1/2/W, respectively.The possibility of detecting two
                      spectral bands with the same pixelopens up interesting
                      applications in the field of IR imaging andmaterial
                      recognition, as shown in a solvent detection test.
                      Thecontinuous voltage tuning, combined with the nonlinear
                      photoresponse of the detector, enables a novel approach to
                      spectral analysis,demonstrated by identifying the wavelength
                      of a monochromatic beam.},
      cin          = {PGI-9},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {5234 - Emerging NC Architectures (POF4-523) /
                      Verbundprojekt: Nanostrukturierte GeSn Beschichtungen für
                      die Photonik (GESNAPHOTO) - Teilvorhaben: Entwicklung
                      neuartiger Detektoren und Emitter basierend auf GeSn
                      Schichtstrukturen (13N14159) / Verbundprojekt: Erforschung
                      nanoelektronischer Höchstleistungs-Bauelemente für
                      innovative Elektronik auf Basis neuer Materialsysteme -
                      ForMikro-SiGeSn-NanoFETs - , Teilvorhaben: CVD-basierte
                      Herstellung von SiGeSn-Halbleiterheterostrukturen und
                      vertikalen (16ES1074)},
      pid          = {G:(DE-HGF)POF4-5234 / G:(BMBF)13N14159 / G:(BMBF)16ES1074},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000677543700038},
      doi          = {10.1021/acsphotonics.1c00617},
      url          = {https://juser.fz-juelich.de/record/903469},
}