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@ARTICLE{Spirito:903470,
      author       = {Spirito, Davide and von den Driesch, Nils and Manganelli,
                      Costanza Lucia and Zoellner, Marvin Hartwig and
                      Corley-Wiciak, Agnieszka Anna and Ikonic, Zoran and Stoica,
                      Toma and Grützmacher, Detlev and Buca, Dan Mihai and
                      Capellini, Giovanni},
      title        = {{T}hermoelectric {E}fficiency of {E}pitaxial {G}e{S}n
                      {A}lloys for {I}ntegrated {S}i-{B}ased {A}pplications:
                      {A}ssessing the {L}attice {T}hermal {C}onductivity by
                      {R}aman {T}hermometry},
      journal      = {ACS applied energy materials},
      volume       = {4},
      number       = {7},
      issn         = {2574-0962},
      address      = {Washington, DC},
      publisher    = {ACS Publications},
      reportid     = {FZJ-2021-05142},
      pages        = {7385 - 7392},
      year         = {2021},
      abstract     = {Energy harvesting for Internet of Things
                      applications,comprising sensing, life sciences, wearables,
                      and communications, requiresefficient thermoelectric (TE)
                      materials, ideally semiconductors compatiblewith Si
                      technology. In this work, we investigate the potential of
                      GeSn/Gelayers, a group IV material system, as TE material
                      for low-grade heatconversion. We extract the lattice thermal
                      conductivity, by developing ananalytical model based on
                      Raman thermometry and heat transport model,and use it to
                      predict thermoelectric performances. The lattice
                      thermalconductivity decreases from 56 W/(m·K) for Ge to 4
                      W/(m·K) byincreasing the Sn atomic composition to $14\%.$
                      The bulk cubic Ge0.86Sn0.14alloy features a TE figure of
                      merit of ZT ∼ 0.4 at 300 K and an impressive1.04 at 600 K.
                      These values are extremely promising in view of the use
                      ofGeSn/Ge layers operating in the typical on-chip
                      temperature range.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {540},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {5234 - Emerging NC Architectures (POF4-523)},
      pid          = {G:(DE-HGF)POF4-5234},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000678382900105},
      doi          = {10.1021/acsaem.1c01576},
      url          = {https://juser.fz-juelich.de/record/903470},
}