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@ARTICLE{Alvarez:903551,
      author       = {Alvarez, Agustin O. and Ravishankar, Sandheep and
                      Fabregat-Santiago, Francisco},
      title        = {{C}ombining {M}odulated {T}echniques for the {A}nalysis of
                      {P}hotosensitive {D}evices},
      journal      = {Small methods},
      volume       = {5},
      number       = {10},
      issn         = {2366-9608},
      address      = {Weinheim},
      publisher    = {WILEY-VCH Verlag GmbH $\&$ Co. KGaA},
      reportid     = {FZJ-2021-05219},
      pages        = {2100661 -},
      year         = {2021},
      abstract     = {Small perturbation techniques such as impedance
                      spectroscopy (IS), intensity-modulated photocurrent
                      spectroscopy (IMPS) and intensity-modulated photovoltage
                      spectroscopy (IMVS) are useful tools to characterize and
                      model the optoelectronic properties of photovoltaic and
                      photoelectrochemical devices. The analysis of the impedance
                      spectra is generally carried out through the modeling of the
                      internal processes occurring in the device with an
                      equivalent circuit. Whereas the analysis of the
                      intensity-modulated spectroscopies is often focused on the
                      characteristic response times that are associated with
                      physical mechanisms such as recombination or transport. In
                      this work, we propose a procedure to analyze photosensitive
                      devices by combining these three techniques. This procedure
                      allows the accurate identification of the common equivalent
                      circuit and the subsequent application to fitting the three
                      spectra. As a result, together with the electrical
                      parameters associated to charge transport, accumulation and
                      recombination, it is possible to obtain optoelectronic
                      parameters such as the charge separation efficiency,
                      external and internal quantum efficiency. Our theoretical
                      approach is experimentally applied in the characterization
                      of a silicon photodiode, illustrating the intrinsical
                      relationship between these techniques. This procedure has a
                      great potential to contribute to the characterization and
                      understanding of the operating principles that govern the
                      response of photoactive devices.},
      cin          = {IEK-5},
      ddc          = {620},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {121 - Photovoltaik und Windenergie (POF4-121) / 1215 -
                      Simulations, Theory, Optics, and Analytics (STOA)
                      (POF4-121)},
      pid          = {G:(DE-HGF)POF4-121 / G:(DE-HGF)POF4-1215},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {pmid:34927925},
      UT           = {WOS:000692464600001},
      doi          = {10.1002/smtd.202100661},
      url          = {https://juser.fz-juelich.de/record/903551},
}