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@ARTICLE{Ferdowsi:904101,
      author       = {Ferdowsi, Parnian and Ochoa-Martinez, Efrain and Steiner,
                      Ullrich and Saliba, Michael},
      title        = {{O}ne-{S}tep {S}olvent-{F}ree {M}echanochemical
                      {I}ncorporation of {I}nsoluble {C}esium {S}alt into
                      {P}erovskites for {W}ide {B}and-{G}ap {S}olar {C}ells},
      journal      = {Chemistry of materials},
      volume       = {33},
      number       = {11},
      issn         = {0897-4756},
      address      = {Washington, DC},
      publisher    = {American Chemical Society},
      reportid     = {FZJ-2021-05671},
      pages        = {3971 - 3979},
      year         = {2021},
      abstract     = {The preparation of high-quality perovskite thin films with
                      a low concentration of defects has recently been achieved
                      through cation engineering using, for example, Cs halide
                      salts. However, many Cs salts cannot be adopted readily due
                      to their frequent insolubility in typical
                      N,N-dimethylformamide (DMF) or dimethyl sulfoxide (DMSO)
                      solvent systems. Herein, we report the application of green,
                      rapid, and solvent-free mechanosynthetic ball-milling for
                      the incorporation of the otherwise insoluble CsBr to realize
                      wide band-gap perovskite solar cells (PSCs). We mechanically
                      synthesize triple-cation (cesium (Cs)/formamidinium
                      (FA)/methylammonium (MA)) wide band-gap perovskites,
                      resulting in subsequent powders that were soluble in mixed
                      DMF/DMSO (4:1, V/V) solvents. Otherwise, the preparation of
                      triple cations for wide band-gap perovskites through
                      conventional solution processing could not be realized. The
                      use of mechanosynthesis perovskites for thin-film formation
                      allows for the growth of relatively large crystalline grains
                      with grains diameter in the range of 500–700 nm. The
                      champion device achieved a maximum PCE of $7.3\%$ $(7.03\%$
                      stabilized), with JSC of 7.08 mA cm–2, VOC of 1.48 V, and
                      a fill factor (FF) of $70\%.$ This performance and voltage
                      are among the highest reported for wide band-gap PSC devices
                      incorporating triple-cation Csx(FAyMA(1–y))(1–x)PbBr3
                      perovskites. These results show that the use of a
                      mechanosynthetic strategy to add insoluble dopants to wide
                      band-gap perovskites provides a promising strategy for the
                      formation of high-quality films. Furthermore,
                      mechanoperovskite showed higher phase purity, VOC, and
                      efficiency as compared to the conventional
                      solution-processed devices.},
      cin          = {IEK-5},
      ddc          = {540},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {1212 - Materials and Interfaces (POF4-121)},
      pid          = {G:(DE-HGF)POF4-1212},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000661521800010},
      doi          = {10.1021/acs.chemmater.1c00276},
      url          = {https://juser.fz-juelich.de/record/904101},
}